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Observing sub-microsecond telegraph noise with the radio frequency single electron transistor

J. Appl. Phys. 96, 6827 (2004); doi:10.1063/1.1813619

Issue Date: 1 December 2004

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T. M. Buehler, D. J. Reilly, R. P. Starrett, V. C. Chan, A. R. Hamilton, A. S. Dzurak, and R. G. Clark
Centre for Quantum Computer Technology, Schools of Physics and Electrical Engineering & Telecommunications, University of New South Wales, Sydney 2052, Australia
Telegraph noise, which originates from the switching of charge between metastable trapping sites, becomes increasingly important as device sizes approach the nanoscale. For charge-based quantum computing, this noise may lead to decoherence and loss of readout fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe microsecond telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate. ©2004 American Institute of Physics
History: Received 23 August 2004; accepted 14 September 2004
Permalink: http://link.aip.org/link/?JAPIAU/96/6827/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.35.Gv
    Single electron devices
  • 85.30.Tv
    Semiconductor field effect devices
  • 72.70.+m
    Noise processes and phenomena in electronic transport
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (22)
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For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. P. Dutta and P. M. Horn, Rev. Mod. Phys. 53, 497 (1981).
  2. M. B. Weissman, Rev. Mod. Phys. 60, 537 (1988).
  3. T. Itakura and Y. Tokura, Phys. Rev. B 67, 195320 (2003).
  4. E. Paladino, L. Faoro, G. Falci, and R. Fazio, Phys. Rev. Lett. 88, 228304 (2002).
  5. J. M. Martinis, S. Nam, J. Aumentado, K. M. Lang, and C. Urbina, Phys. Rev. B 67, 094510 (2003).
  6. A. Shnirman, G. Schoen, and Z. Hermon, Phys. Rev. Lett. 79, 2371 (1997).
  7. T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong, and Y. Hirayama, Phys. Rev. Lett. 91, 226804 (2003).
  8. R. J. Schoelkopf, P. Wahlgren, A. A. Kozhevnikov, P. Delsing, and D. E. Prober, Science 280, 1238 (1998).
  9. T. Fujisawa and Y. Hirayama, Appl. Phys. Lett. 77, 543 (2000).
  10. W. Lu, Z. Ji, L. N. Pfeiffer, K. W. West, and A. J. Rimberg, Nature (London) 423, 422 (2003).
  11. B. E. Kane, Nature (London) 393, 133 (1998).
  12. L. C. L. Hollenberg, A. S. Dzurak, C. Wellard, A. R. Hamilton, D. J. Reilly, G. J. Milburn, and R. G. Clark, Phys. Rev. B 69, 113301 (2004).
  13. D.M. Camey et al., (unpublished).
  14. T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987).
  15. T. M. Buehler D. J. Reilly, R. P. Starrett, N. A. , A. R. Hamilton, A. S. Dzurak, and R. G. Clark, J. Appl. Phys. 96, 4508 (2004).
  16. M. J. Uren, M. J. Kirton, and S. Collins, Phys. Rev. B 37, 8346 (1988).
  17. A. B. Zorin, F.-J. Ahlers, J. Niemeyer, T. Weimann, H. Wolf, V. A. Krupenin, and S. V. Lotkhov, Phys. Rev. B 53, 13682 (1996).
  18. K. Segall, K. W. Lehnert, T. R. Stevenson, R. J. Schoelkopf, P. Wahlgren, A. Aassime, and P. Delsing, Appl. Phys. Lett. 81, 4859 (2002).
  19. R. L. Kautz, M. W. Keller, and J. M. Martinis, Phys. Rev. B 62, 15888 (2000).
  20. D. H. Cobden, M. J. Uren, and M. Pepper, Phys. Rev. Lett. 71, 4230 (1993).
  21. J. H. Scofield, N. Borland, and D. M. Fleetwood, Appl. Phys. Lett. 76, 3248 (2000).
  22. M. Xiao, I. Martin, H. W. Jiang, Phys. Rev. Lett. 91, 078301 (2003).

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