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Band alignment issues related to HfO2/SiO2/p-Si gate stacks

J. Appl. Phys. 96, 7485 (2004); doi:10.1063/1.1803107

Issue Date: 15 December 2004

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S. Sayan, T. Emge, and E. Garfunkel
Department of Chemistry, Rutgers University, Piscataway, New Jersey 08854

Xinyuan Zhao, L. Wielunski, R. A. Bartynski, and David Vanderbilt
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854

J. S. Suehle
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899

S. Suzer
Department of Chemistry, Bilkent University, 06533 Ankara, Turkey

M. Banaszak-Holl
Department of Chemistry, University of Michigan, Ann Arbor, Michigan 48109
The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film. ©2004 American Institute of Physics
History: Received 12 February 2004; accepted 4 August 2004
Permalink: http://link.aip.org/link/?JAPIAU/96/7485/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.55.+f
    Dielectric thin films
  • 71.20.Ps
    Electronic structure of other crystalline inorganic compounds excluding metals, alloys, semiconductors and fullerenes
  • 71.55.Ht
    Impurity and defect levels in other nonmetals excluding Semiconductors
  • 79.60.Dp
    Photoelectron spectra of adsorbed layers and thin films
  • 78.70.Ck
    X-ray scattering (condensed matter)
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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