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Thermal effect on the oxides on Nb(100) studied by synchrotron-radiation x-ray photoelectron spectroscopy

J. Appl. Phys. 96, 7675 (2004); doi:10.1063/1.1809774

Issue Date: 15 December 2004

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Qing Ma, P. Ryan, J. W. Freeland, and R. A. Rosenberg
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
Synchrotron-radiation glancing-incidence and angle-resolved photoelectron spectroscopy (PES) is used to study the oxides grown in air on a single-crystal Nb(100) surface. Both core-level and valance-band PES are measured for various heat treatments. Glancing-incidence excitation was used to characterize the outer 2-nm Nb2O5 layer without influence from the substrate and to profile through various oxides by varying the incidence angle. Immediately adjacent to this amorphous layer is a layer of NbO2, which contributes to the density of states at 1.2  eV below the Fermi level. Thereafter, there exist other oxides that interface with the metal substrate. Annealing at 430  K induces a "mild" chemical reaction, which is contained essentially in the oxide layer. Annealing at 550  K causes oxygen diffusion into the metal and leaves an oxide layer consisting primarily of Nb2O and a roughened surface, as evidenced by angle-resolved photoemission measurements. Oxide composition alteration caused by annealing at these moderated temperatures is believed to be interface mediated. ©2004 American Institute of Physics
History: Received 4 June 2004; accepted 2 September 2004
Permalink: http://link.aip.org/link/?JAPIAU/96/7675/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 73.20.At
    Surface states, band structure, electron density of states
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • 68.35.Bs
    Structure of clean solid surfaces (reconstruction)
  • 71.20.Ps
    Electronic structure of other crystalline inorganic compounds excluding metals, alloys, semiconductors and fullerenes
  • 68.35.Fx
    Diffusion; interface formation (solid surfaces)
  • 79.60.Bm
    Photoelectron spectra of clean metal, semiconductor, and insulator surfaces
  • 79.60.Dp
    Photoelectron spectra of adsorbed layers and thin films
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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