Journal of Applied Physics
   
 
 
 
Previous Article
Manganese-substituted cobalt ferrite magnetostrictive materials for magnetic stress sensor applications
Metal bonded cobalt ferrite composites have been shown to be promising candidate materials for use in magnetoelastic stress sensors, due to their large magnetostriction and high sensitivity of magneti...
Next Article
Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure
This work studies the breakdown (BD) characteristics of metal-oxide-semiconductor (MOS) capacitors at various temperatures. The oxide thickness and temperature significantly affect the probability of ...

Coupled optical and electronic simulations of electrically pumped photonic-crystal-based light-emitting diodes

J. Appl. Phys. 97, 044503 (2005); doi:10.1063/1.1848194

Published 25 January 2005

You are not logged in to this journal. Log in

Georgios Veronis, Wonjoo Suh, Yang Liu, and Minghui Han
Department of Electrical Engineering, Stanford University, Stanford, California 94305

Zheng Wang
Department of Applied Physics, Stanford University, Stanford, California 94305

Robert W. Dutton and Shanhui Fan
Department of Electrical Engineering, Stanford University, Stanford, California 94305
We use coupled optical and electronic simulations to investigate design trade-offs in electrically pumped photonic-crystal-based light-emitting diodes. A finite-difference frequency-domain electromagnetic solver is used to calculate the spontaneous emission enhancement factor and the extraction efficiency as a function of frequency and of position of the emitting source. The calculated enhancement factor is fed into an electronic simulator, which solves the coupled continuity equations for electrons and holes and Poisson's equation. We simulate a two-dimensional structure consisting of a photonic-crystal slab with a single-defect cavity and investigate different electrical pumping geometries for such a cavity. ©2005 American Institute of Physics
History: Received 2 September 2004; accepted 16 November 2004; published 25 January 2005
Permalink: http://link.aip.org/link/?JAPIAU/97/044503/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (185 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • 85.30.De
    Semiconductor-device characterization, design, and modeling
  • 73.63.Hs
    Quantum wells (electronic transport)
  • 73.40.Kp
    Electrical properties of III–V semiconductor-to-semiconductor contacts, pn junctions, and heterojunctions
  • YEAR: 2005

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (32)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, Phys. Rev. Lett. 78, 3294 (1997).
  2. A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, Appl. Phys. Lett. 78, 563 (2001).
  3. H. Ichikawa and T. Baba, Appl. Phys. Lett. 84, 457 (2004).
  4. H. Y. Ryu, J. K. Hwang, Y. J. Lee, and Y. H. Lee, IEEE J. Sel. Top. Quantum Electron. 8, 231 (2002).
  5. T. Baba et al., J. Lightwave Technol. 17, 2113 (1999).
  6. B. J. Matterson, J. M. Lupton, A. F. Safonov, M. G. Salt, W. L. Barnes, and I. D. W. Samuel, Adv. Mater. (Weinheim, Ger.) 13, 123 (2001).
  7. M. Rattier et al., IEEE J. Sel. Top. Quantum Electron. 8, 238 (2002).
  8. T. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 466 (2004).
  9. J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, Appl. Phys. Lett. 84, 3885 (2004).
  10. O. Painter, R. K. Lee, A. Scherer, A. Yariv, J. D. O'Brien, P. D. Dapkus, and I. Kim, Science 284, 1819 (1999).
  11. O. J. Painter, A. Husain, A. Scherer, J. D. O'Brien, I. Kim, and P. D. Dapkus, J. Lightwave Technol. 17, 2082 (1999).
  12. S. Noda, M. Yokoyama, M. Imada, A. Chutinan, and M. Mochizuki, Science 293, 1123 (2001).
  13. H. Y. Ryu, J. K. Hwang, and Y. H. Lee, IEEE J. Quantum Electron. 39, 314 (2003).
  14. H. Y. Ryu, H. G. Park, and Y. H. Lee, IEEE J. Sel. Top. Quantum Electron. 8, 891 (2002).
  15. H. G. Park, J. K. Hwang, J. Huh, H. Y. Ryu, S. H. Kim, J. S. Kim, and Y. H. Lee, IEEE J. Quantum Electron. 38, 1353 (2002).
  16. J. K. Hwang, H. Y. Ryu, D. S. Song, I. Y. Han, H. K. Park, D. H. Jang, and Y. H. Lee, IEEE Photonics Technol. Lett. 12, 1295 (2000).
  17. J. K. Hwang, H. Y. Ryu, D. S. Song, I. Y. Han, H. W. Song, H. K. Park, Y. H. Lee, and D. H. Jang, Appl. Phys. Lett. 76, 2982 (2000).
  18. H. G. Park, S. K. Kim, S. H. Kwon, G. H. Kim, S. H. Kim, H. Y. Ryu, S. B. Kim, and Y. H. Lee, IEEE Photonics Technol. Lett. 15, 1327 (2003).
  19. H. G. Park, S. H. Kim, S. H. Kwon, Y. G. Ju, J. K. Yang, J. H. Baek, S. B. Kim, and Y. H. Lee, Science 305, 1444 (2004).
  20. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Berlin, Germany, 1984).
  21. D. Ahn, S. L. Chuang, and Y. C. Chang, J. Appl. Phys. 64, 4056 (1988).
  22. M. Grupen and K. Hess, IEEE J. Quantum Electron. 34, 120 (1998).
  23. S.L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995).
  24. E. Yablonovitch, Phys. Rev. Lett. 58, 2059 (1987).
  25. S. John, Phys. Rev. Lett. 58, 2486 (1987).
  26. D. Delbeke, R. Bockstaele, P. Bienstman, R. Baets, and H. Benisty, IEEE J. Sel. Top. Quantum Electron. 8, 189 (2002).
  27. S. D. Wu and E. N. Glytsis, J. Opt. Soc. Am. A 19, 2018 (2002).
  28. C. Rafferty and R. K. Smith, Comput. Model. Eng. Sci. 1, 151 (2000).
  29. S. G. Johnson and J. D. Joannopoulos, Opt. Express 8, 173 (2001).
  30. E. F. Schubert, N. E. J. Hunt, M. Micovic, R. J. Malik, D. L. Sivco, A. Y. Cho, and G. J. Zydzik, Science 265, 943 (1994).
  31. G. A. Kosinovsky, M. Grupen, and K. Hess, Appl. Phys. Lett. 65, 3218 (1994).
  32. A. A. Chelny, M. S. Kobyakova, and P. G. Eliseev, IEEE J. Quantum Electron. 40, 113 (2004).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.