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Bulk GaN and AlGaN/GaN heterostructure drift velocity measurements and comparison to theoretical models

J. Appl. Phys. 97, 063705 (2005); doi:10.1063/1.1854724

Published 9 March 2005

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J. M. Barker and D. K. Ferry
Department of Electrical Engineering, Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706

D. D. Koleske and R. J. Shul
Sandia National Laboratories, Albuquerque, New Mexico 87185
The room-temperature velocity-field characteristics for n-type gallium nitride and AlGaN/GaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5×107  cm/s at 180  kV/cm for the n-type gallium nitride and 3.1×107  cm/s at 140  kV/cm for the AlGaN/GaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques. ©2005 American Institute of Physics
History: Received 3 September 2004; accepted 13 December 2004; published 9 March 2005
Permalink: http://link.aip.org/link/?JAPIAU/97/063705/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Kp
    Electrical properties of III–V semiconductor-to-semiconductor contacts, p–n junctions, and heterojunctions
  • 73.50.Dn
    Low-field transport and mobility; piezoresistance (thin films)
  • 72.80.Ey
    Electrical conductivity of III–V and II–VI semiconductors
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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