Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Size effect on the crystal structure of barium titanate nanoparticles
A size effect on crystal structure has been investigated for barium titanate (BaTiO3) nanoparticles of 40-, 140-, and 430-nm sizes, by means of neutron and high-resolution synchrotron x-ray powder-dif...
Next Article
Field-enhancement factor for carbon nanotube array
To estimate the apex field-enhancement factor associated with an array of carbon nanotubes (CNTs) on a planar cathode surface, the model of the floating spheres between parallel anode and cathode plat...

Robust and regenerable integrally gated carbon nanotube field emitter arrays

J. Appl. Phys. 98, 014314 (2005); doi:10.1063/1.1946196

Published 11 July 2005

You are not logged in to this journal. Log in

David S. Y. Hsu and Jonathan L. Shaw
Naval Research Laboratory, Washington DC 20375-5320
We have grown multiwalled carbon nanotubes by chemical-vapor deposition on two types of gated structures, one containing a silicon post, and another having an open aperture. A gate current to anode-current ratio of 2.5%, the lowest of any nanotube field emitter arrays was measured for the open aperture configuration. The silicon post structures produced 1-nA emission current at gate voltages below 20  V and up to 1  mA at 40  V (from 0.5-mm2 area). The emission was relatively stable compared to other field emitter arrays and destructive arcing was not observed. The gate voltage needed to produce a given emission current was reduced by adsorbed water vapor and was unaffected by xenon. Emission in hydrogen at pressures near 10–4  Torr also increased the emission current, and restored a large fraction of the original emission current to arrays degraded by operation in oxygen. Electron energy distributions broaden and shift to lower energies at higher emission current. The broadening can be explained by the potentials developed at the silicon-nanotube contacts, and at the nanotube-vacuum interface.
History: Received 4 October 2004; accepted 10 May 2005; published 11 July 2005
Permalink: http://link.aip.org/link/?JAPIAU/98/014314/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (610 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.35.Kt
    Nanotube devices
  • 85.45.Db
    Field emitters and arrays, cold electron emitters
  • 81.15.Gh
    Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc
  • YEAR: 2005

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (32)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. J. L. Shaw, J. Vac. Sci. Technol. B 18, 1817 (2000).
  2. J. L. Shaw, and D. S. Y. Hsu, J. Vac. Sci. Technol. B 23, 836 (2005).
  3. K. A. Dean and B. R. Chalamala, Appl. Phys. Lett. 75, 3017 (1999);
    4. 76, 375 (2000).
  4. C. Bower, W. Zhu, D. Shalom, D. Lopez, L. H. Chen, P. L. Gammel, and S. Jin, Appl. Phys. Lett. 80, 3820 (2002).
  5. N. S. Lee et al., Diamond Relat. Mater. 10, 265 (2001).
  6. J. H. Kang et al., Mater. Res. Soc. Symp. Proc. 621, R5.2.1 (2000).
  7. S.H. Jo et al., Proceedings of the 14th International Vacuum Microelectronics Conference IEEE, Davis, CA, 12–16 August 2001 (unpublished), pp. 31–32.
  8. J.W. Nam et al., Proceedings of the 14th International Vacuum Microelectronics Conference IEEE, Davis, CA, 12–16 August 2001 (unpublished), 57–58.
  9. F. Ito, Y. Tomihari, Y. Okada, K. Konuma, and A. Okamoto, IEEE Electron Device Lett. 22, 426 (2001).
  10. D.S. Chung et al., Proceedings of the 14th International Vacuum Microelectronics Conference IEEE, Davis, CA, 12–16 August 2001 (unpublished), pp. 179–180.
  11. N. S. Xu, Z. S. Wu, S. Z. Deng and Jun Chen, J. Vac. Sci. Technol. B 19, 1370 (2001).
  12. Q. H. Wang, M. Yan, and R. P. H. Chang, Appl. Phys. Lett. 78, 1294 (2001).
  13. A.A. Talin, B.F. Coll, Y. Wei, K.A. Dean and J.E. Jaskie, Cold Cathodes, Electrochemical Society Proceedings (Electrochemical Society, Pennington, NJ, 2000), pp. 247–262.
  14. Y. H. Lee, Y. T. Jang, D. H. Kim, J. H. Ahn, and B. K. Ju, Adv. Mater. (Weinheim, Ger.) 13, 479 (2001).
  15. G. Pirio, P. Legagneux, D. Pribat, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, and W. I. Milne, Nanotechnology 13, 1 (2002).
  16. M. A. Guillorn, M. D. Hale, V. I. Merkulov, M. L. Simpson, G. Y. Eres, H. Cui, A. A. Puretzky, D. B. Geohegan, Appl. Phys. Lett. 81, 2860 (2002).
  17. Y.-T. Jang, C.-H. Choi, B.-K. Ju, J. H. Ahn, and Y.-H. Lee, Thin Solid Films 436, 298 (2003).
  18. Y.-T. Jang, C.-H. Choi, B.-K. Ju, J. H. Ahn, and Y.-H. Lee, Nanotechnology 14, 497 (2003).
  19. Y.-T. Jang, C.-H. Choi, B.-K. Ju, J. H. Ahn, and Y.-H. Lee, Physica B 334, 9 (2003).
  20. Y. M. Wong, W. P. Kang, J. L. Davidson, W. Hofmeister, S. Wei, and J. H. Huang, J. Vac. Sci. Technol. B 23, 868 (2005).
  21. D. Temple, C. A. Ball, W. D. Palmer, L. N. Yadon, D. Vellenga, J. Mancusi, G. E. McGuire, and H. F. Gray, J. Vac. Sci. Technol. B 13, 150 (1995).
  22. D. Palmer, H. F. Gray, J. Mancusi, D. Temple, C. Ball, J. L. Shaw, and G. E. McGuire, J. Vac. Sci. Technol. B 13, 576 (1995).
  23. D. S. Y. Hsu and J. Shaw, Appl. Phys. Lett. 80, 118 (2002).
  24. D. S. Y. Hsu, Appl. Phys. Lett. 80, 2988 (2002).
  25. D. S. Y. Hsu and H. F. Gray, U.S. Patent No. 6,333,598 (25 December 2001);
    26. D. S. Y. Hsu, U.S. Patent No. 6,440,763 (27 August 2002);
    U.S. Patent No. 6,448,701 (10 September 2002);
    U.S. Patent No. 6,568,979 (27 May 2003);
    U.S. Patent No. 6,590,322 (8 July 2003);
    U.S. Patent No. 6,890,233 (10 May 2005).
  26. J.L. Shaw and D.S. Y. Hsu, Proceedings of the 14th International Vacuum Microelectronics Conference IEEE, Davis, CA, 12–16 August 2001 (unpublished), pp. 45–46.
  27. J.L. Shaw and D.S. Y. Hsu, Cold Cathodes II, Electrochemical Society Proceedings (Electrochem Society, Pennington, NJ, 2002), pp. 65–78.
  28. R. D. Young, Phys. Rev. 113, 110 (1959).
  29. J. W. Gadzuk and E. W. Plummer, Rev. Mod. Phys. 45, 487 (1973).
  30. T. E. Madey and J. T. Yates Jr., J. Vac. Sci. Technol. 8, 525 (1971).
  31. http://physics.nist.gov/PhysRefData/Ionization/
  32. C. S. Trevisan and J. Tennyson, Plasma Phys. Controlled Fusion 44, 1263 (2002).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics