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Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy

J. Appl. Phys. 99, 023703 (2006); doi:10.1063/1.2159547

Published 17 January 2006

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H. Zhang, E. J. Miller, and E. T. Yu
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407
Temperature-dependent current-voltage measurements combined with conductive atomic force microscopy and analytical modeling have been used to assess possible mechanisms of reverse-bias leakage current flow in Schottky diodes fabricated from GaN and Al0.25Ga0.75N/GaN structures grown by molecular-beam epitaxy. Below 150  K, leakage current is nearly independent of temperature, indicating that conduction is dominated by tunneling transport. At higher temperatures, leakage current in both GaN and Al0.25Ga0.75N/GaN diode structures is well described by a Frenkel-Poole emission model. Based on the inferred emission barrier heights and the observation that room-temperature leakage current is dominated by the presence of highly conductive dislocations, it is suggested that the key carrier transport process is emission of electrons from a trap state near the metal-semiconductor interface into a continuum of states associated with each conductive dislocation. In this model for leakage current flow, the emission barrier heights measured for the GaN and Al0.25Ga0.75N/GaN diode structures indicate that the conductive dislocation states are aligned in energy between GaN and Al0.25Ga0.75N. ©2006 American Institute of Physics
History: Received 6 June 2005; accepted 22 November 2005; published 17 January 2006
Permalink: http://link.aip.org/link/?JAPIAU/99/023703/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Hi
    Surface barrier, boundary, and point contact semiconductor devices
  • 85.30.Kk
    Semiconductor junction diodes
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 68.37.Ps
    Atomic force microscopy (AFM) of surfaces, interfaces and thin films
  • 73.50.Fq
    High-field and nonlinear effects in thin film electronic transport
  • 73.50.Gr
    Charge carriers: generation, recombination, lifetime, trapping, mean free paths (thin films)
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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