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Nonequilibrium radiation of long-wavelength InAs/GaSb superlattice photodiodes

J. Appl. Phys. 99, 043503 (2006); doi:10.1063/1.2170947

Published 21 February 2006

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Darin Hoffman, Andrew Hood, Frank Fuchs, and Manijeh Razeghi
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208 and Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
The emission behavior of binary-binary type-II InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 and 13  µm. With a radiometric calibration of the experimental setup the internal and external quantum efficiencies have been determined in the temperature range between 80 and 300  K for both the negative and positive luminescences. The negative luminescence efficiency approaches values as high as 35% without antireflection coating. An analytic description of the temperature dependence of the internal quantum efficiency around a zero-bias voltage allows for the determination of the coefficient for electron-hole-electron Auger recombination Gamman=1×1024  cm6  s–1. For an n-type material, the minority-carrier lifetime is provided as a function of band gap and temperature, explaining the strong decrease of the minority-carrier lifetime in the case of an n-type residual background exceeding 1×1016  cm–3. Furthermore, an analytic expression of the quantum efficiency for the radiation upon forward-bias conditions is given. ©2006 American Institute of Physics
History: Received 16 September 2005; accepted 17 December 2005; published 21 February 2006
Permalink: http://link.aip.org/link/?JAPIAU/99/043503/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • YEAR: 2006

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0021-8979 (print)   1089-7550 (online)
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