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In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition

J. Appl. Phys. 99, 044906 (2006); doi:10.1063/1.2173043

Published 22 February 2006

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Soon-Yong Kwon, Hyun Jin Kim, Hyunseok Na, Young-Woon Kim, Hui-Chan Seo, Hee Jin Kim, Yoori Shin, and Euijoon Yoon
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea

Yoon-Soo Park
School of Physics, Seoul National University, Seoul 151-742, Korea
Growth mechanism of In-rich InGaN/GaN quantum wells (QWs) was investigated. First, we examined the initial stage of InN growth on GaN template considering strain-relieving mechanisms such as defect generation, islanding, and alloy formation at 730 °C. It was found that, instead of formation of InN layer, defective In-rich InGaN layer with thickness fluctuations was formed to relieve large lattice mismatch over 10% between InN and GaN. By introducing growth interruption (GI) before GaN capping at the same temperature, however, atomically flat InGaN/GaN interfaces were observed, and the quality of In-rich InGaN layer was greatly improved. We found that decomposition and mass transport processes during GI in InGaN layer are responsible for this phenomenon. There exists severe decomposition in InGaN layer during GI, and a 1-nm-thick InGaN layer remained after GI due to stronger bond strength near the InGaN/GaN interface. It was observed that the mass transport processes actively occurred during GI in InGaN layer above 730 °C so that defect annihilation in InGaN layer was greatly enhanced. Finally, based on these experimental results, we propose the growth mechanism of In-rich InGaN/GaN QWs using GI. ©2006 American Institute of Physics
History: Received 22 November 2004; accepted 3 January 2006; published 22 February 2006
Permalink: http://link.aip.org/link/?JAPIAU/99/044906/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.07.St
    Quantum wells: fabrication and characterization
  • 68.65.Fg
    Quantum wells (structure and nonelectronic properties)
  • 81.15.Gh
    Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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