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Excitons in electrostatic traps

J. Appl. Phys. 99, 066104 (2006); doi:10.1063/1.2181276

Published 21 March 2006

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A. T. Hammack, N. A. Gippius, Sen Yang, G. O. Andreev, and L. V. Butov
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319

M. Hanson and A. C. Gossard
Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106-5050
We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine excitons in the electrostatic traps. We present calculations for various classes of electrostatic traps and experimental proof of principle for trapping of indirect excitons in electrostatic traps. ©2006 American Institute of Physics
History: Received 4 April 2005; accepted 7 February 2006; published 21 March 2006
Permalink: http://link.aip.org/link/?JAPIAU/99/066104/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.21.Fg
    Quantum wells (electron states/collective excitations)
  • 73.20.Mf
    Collective excitations (surface/interface states) including excitons, polarons, plasmons and other charge-density excitations
  • 71.35.-y
    Excitons and related phenomena
  • 73.22.Lp
    Collective excitations (nanoscale materials)
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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