Real-time coarsening dynamics of Ge/Si(100) nanostructures
J. Appl. Phys. 99, 094305 (2006); doi:10.1063/1.2191574
Published 12 May 2006
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The coarsening dynamics of Ge/Si(100) nanostructures were monitored using real-time, elevated temperature scanning tunneling microscopy (STM). Gas-source molecular beam epitaxy from digermane onto Si(100) was used to produce mixed hut and pyramid cluster ensembles. The width of the most elongated rectangular-based hut clusters was always less than the side length of square-based pyramid clusters for the growth conditions employed. This suggests that pyramid elongation to form hut clusters occurred at early growth stages for some smaller clusters. A previously unidentified coarsening mechanism was characterized during growth temperature annealing and was interpreted using atomistic elastic modeling. Pyramid clusters were more stable than narrow hut clusters with larger volumes. These larger volume huts decayed by reducing their length at a constant width, finally becoming small pyramids. These small pyramids are less stable than those that never elongated to form huts and consequently dissolve. The decrease in the total island volume identified using STM was attributed to large (diameter>1 µm), low chemical potential clusters. These clusters depleted the surface of Ge adatoms as evidenced by denuded zones devoid of smaller clusters observed for growth and annealing at higher temperatures. These results suggest that a preferred island size for pyramids and huts does not exist.
©2006 American Institute of Physics
| History: | Received 12 July 2005; accepted 28 February 2006; published 12 May 2006 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/99/094305/1 |
KEYWORDS and PACS
germanium,
elemental semiconductors,
nanostructured materials,
molecular beam epitaxial growth,
semiconductor growth,
scanning tunnelling microscopy,
annealing,
chemical potential
- 81.10.Bk
Crystal growth from vapor - 61.46.Bc
Clusters - 61.72.Cc
Kinetics of defect formation and annealing - 68.37.Ef
Scanning tunneling microscopy of surfaces, interfaces and thin films including chemistry induced with STM - 65.80.+n
Thermal properties of small particles, nanocrystals, and nanotubes - YEAR: 2006
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
REFERENCES (13)
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- Y. W. Mo, D. E. Savage, B. S. Schwartzentruber, and M. G. Lagally, Phys. Rev. Lett. 65, 1020 (1990).
- M. Tomitori, K. Watanabe, J. Kobayashi, and O. Nishikawa, Appl. Surf. Sci. 76/77, 332 (1994).
- M. Kastner and B. Voigtlander, Phys. Rev. Lett. 82, 2745 (1998);
- F. M. Ross, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 80, 984 (1997).
- C. Wagner,
Z. Elektrochem. 65, 581 (1961) . - B. K. Chakraverty,
J. Phys. Chem. Solids 28, 2401 (1967) . - T. I. Kamins, G. Medeiros-Ribeiro, D. A. A. Ohlberg, and R. Stanley Williams, J. Appl. Phys. 85, 1159 (1999).
- Y. Zhang and J. Drucker, J. Appl. Phys. 93, 9583 (2003).
- J. A. Floro, M. B. Sinclair, E. Chason, L. B. Freund, R. D. Twesten, R. Q. Hwang, and G. A. Lucadamo, Phys. Rev. Lett. 84, 701 (1999).
- G. Medeiros-Ribeiro, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, Phys. Rev. B 58, 3533 (1998).
- F. H. Stillinger and T. A. Weber, Phys. Rev. B 31, 5262 (1985).
- K. Ding and H. C. Andersen, Phys. Rev. B 34, 6987 (1986).
- P. Raiteri, D. B. Migas, L. Miglio, A. Rastelli, and H. von Känel, Phys. Rev. Lett. 88, 256103 (2002).







