Influence of longitudinal electric field on the hot-phonon effect in quantum wells
Using the Huang-Zhu model [K. Huang and B.-F. Zhu, Phys. Rev. B 38, 13377 (1988)] for the optical phonons and associated carrier-phonon interactions in semiconductor superlattices, the effects of long...
Using the Huang-Zhu model [K. Huang and B.-F. Zhu, Phys. Rev. B 38, 13377 (1988)] for the optical phonons and associated carrier-phonon interactions in semiconductor superlattices, the effects of long...
Influence of the microstructure on the magnetism of Co-doped ZnO thin films
The prediction of ferromagnetism at room temperature in Co–ZnO thin films has generated a large interest in the community due to the possible applications. However, the results are controversial,...
The prediction of ferromagnetism at room temperature in Co–ZnO thin films has generated a large interest in the community due to the possible applications. However, the results are controversial,...
High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers
J. Appl. Phys. 100, 013708 (2006); doi:10.1063/1.2214301
Published 14 July 2006
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We fabricate thin-film transistors (TFTs) on both strained and unstrained single-crystal Si membranes transferred to flexible-polymer substrates. The active layer is transferred from the starting silicon on insulator (SOI) using a simple, fast, and reliable dry-printing method. When a multilayer Si/SiGe/Si structure is pseudomorphically grown on SOI and the buried oxide is selectively removed, strained Si with a negligible density of dislocations is achieved via elastic strain sharing between the SiGe alloy layer and the Si layers. Both the drain current and the transconductance of TFTs fabricated on this strained Si/SiGe/Si membrane after its transfer to the flexible polymer are much higher than of TFTs fabricated on the unstrained-Si counterpart.
©2006 American Institute of Physics
| History: | Received 13 October 2005; accepted 27 April 2006; published 14 July 2006 |
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http://link.aip.org/link/?JAPIAU/100/013708/1 |
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BibSonomy
KEYWORDS and PACS
silicon,
Ge-Si alloys,
elemental semiconductors,
thin film transistors,
buried layers,
dislocation density,
silicon-on-insulator
- 85.30.Tv
Semiconductor field effect devices - YEAR: 2006
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
AIP
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