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Dielectric scaling of a zero-Schottky-barrier, 5  nm gate, carbon nanotube transistor with source/drain underlaps

J. Appl. Phys. 100, 024317 (2006); doi:10.1063/1.2218764

Published 28 July 2006

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Khairul Alam and Roger K. Lake
Department of Electrical Engineering, University of California, Riverside, California 92521-0204
The effect of gate dielectric on coaxially gated, Schottky-barrier, carbon nanotube field-effect transistors with source and drain underlaps is investigated. For 2  nm thick dielectrics, the substitution of SiO2 with ZrO2 has little effect on the on-current and the subthreshold slope. The principal effect is a change in the intrinsic and parasitic gate capacitances which affects the delay time, cut-off frequency, and Coulomb blockade of the ambipolar leakage current. Using a relatively low-K gate dielectric (as opposed to a high-K gate dielectric) increases the speed performance by reducing parasitic components of the gate capacitance. For a 50  nm long, 1.5  nm diameter, zero-Schottky-barrier carbon nanotube (CNT) with a 5  nm gate and a 2  nm SiO2 dielectric, we obtain a delay time of 31  fs, a cutoff frequency of 8.9  THz, an inverse subthreshold slope S=66  mV/dec, and an on-off current ratio of 8×105 with VDD=0.4  V. Oxide thickness dependence of the on-off current ratio, inverse subthreshold slope, and intrinsic cut-off frequency is also investigated. ©2006 American Institute of Physics
History: Received 13 October 2005; accepted 6 May 2006; published 28 July 2006
Permalink: http://link.aip.org/link/?JAPIAU/100/024317/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 85.35.Kt
    Nanotube devices
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 77.84.Bw
    Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
  • 77.55.+f
    Dielectric thin films
  • 73.23.Hk
    Coulomb blockade; single-electron tunneling
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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