Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
   
 
 
 
Previous Article
Field dependent negative capacitance in small-molecule organic light-emitting diodes
Frequency dependent charge transport in organic light-emitting diodes, including marked negative capacitance (NC), is reproduced through an equivalent circuit model. The robustness of the model is tes...
Next Article
Absorption enhancement due to scattering by dipoles into silicon waveguides
We develop an optical model for absorption enhancement and diffuse reflectance by metal nanoparticles on a silicon waveguide. A point dipole treatment is used, including the effects of the waveguide o...

Dislocation dynamics in strain relaxation in GaAsSb/GaAs heteroepitaxy

J. Appl. Phys. 100, 044503 (2006); doi:10.1063/1.2245206

Published 18 August 2006

You are not logged in to this journal. Log in

B. Pérez Rodríguez
Randall Laboratory, Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109

J. Mirecki Millunchick
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136
The real-time stress evolution has been investigated during molecular-beam epitaxial growth of GaAs1–xSbx/GaAs metamorphic buffer. These real-time data were obtained using an in situ multibeam optical sensor measurement and has been combined with detailed analysis of data obtained from x-ray diffraction, transmission electron microscopy, and atomic force microscopy. We compare the strain relaxation of two different compositions of GaAs1–xSbx, and correlated the development of dislocation structure and morphology. Several distinct stages of the strain relaxation were observed during growth, which can be separated in three main regimes: pseudomorphic growth, fast strain relaxation, and saturation. Transmission electron microscopy data show that GaAs0.5Sb0.5 buffer layers have a larger fraction of pure-edge dislocations that arise during the earliest stages of growth. This could have a significant influence in the fabrication of buffer layers, since pure edges are favored over the threading dislocations. The strain relaxation profile for each film was modeled using a modified model of Dodson and Tsao [Phys. Rev. B 38, 12383 (1988)] that takes into account the elastic interactions of misfit dislocations. The model results agree with the experimental data and show that interaction of misfit dislocations is responsible for the large residual stress. In addition, following the description developed by Dodson and Tsao [Phys. Rev. B 38, 12383 (1988)] for the rate of dislocation multiplication, we were able to determine the line density of threading dislocations from the experimental data. This has a potential application in the design of metamorphic buffer layers because our observations are made in real time on individual growth, without the need of external characterization to measure the dislocation density. ©2006 American Institute of Physics
History: Received 11 January 2006; accepted 27 May 2006; published 18 August 2006
Permalink: http://link.aip.org/link/?JAPIAU/100/044503/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (572 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 81.40.Jj
    Elasticity and anelasticity, stress-strain relations
  • 62.40.+i
    Anelasticity, internal friction, stress relaxation, and mechanical resonances
  • 68.60.Bs
    Mechanical and acoustical properties of thin films
  • 61.72.Ff
    Direct observation of dislocations and other defects including etch pits, decoration, electron microscopy, x-ray topography, etc.
  • YEAR: 2006

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (29)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. Y. Cordier, J. M. Chauveau, D. Ferre, and J. Dipersio, J. Vac. Sci. Technol. B 18, 2513 (2000).
  2. J. A. Floro, E. Chason, and S. R. Lee, Mater. Res. Soc. Symp. Proc. 406, 491 (1996).
  3. G. Wedler, J. Walz, T. Hesjedal, E. Chilla, and R. Koch, Phys. Rev. Lett. 80, 2382 (1998).
  4. G. Wedler, B. Wassermann, R. Nötzel, and R. Koch, Appl. Phys. Lett. 78, 1270 (2001).
  5. J. M. Garcia, J. P. Silveria, and F. Briones, Appl. Phys. Lett. 77, 409 (2000).
  6. E. Chason, Y. Yin, K. Tetz, R. Beresford, L. B. Freund, M. Ujue Gonzalez, and J. A. Floro, Mater. Res. Soc. Symp. Proc. 583, 167 (2000).
  7. A. G. Cullis, A. J. Pidduck, and M. T. Emeny, Phys. Rev. Lett. 75, 2368 (1995).
  8. A. M. Andrews, J. S. Speck, A. E. Romanov, M. Bobeth, and W. Pompe, J. Appl. Phys. 91, 1933 (2002).
  9. R. Kaspi, W. T. Cooley, and K. R. Evans, J. Cryst. Growth, 173, 5 (1997).
  10. A. Bosacchi et al., J. Cryst. Growth 201/201, 858 (1999).
  11. R. Beresford, J. Yin, K. Tetz, and E. Chason, J. Vac. Sci. Technol. B 18, 1431 (2000).
  12. B. Pérez Rodríguez and J. Mirecki Millunchick, J. Cryst. Growth 264, 64 (2004).
  13. R. Beresford, K. Tetz, E. Chason, and M. U. González, J. Vac. Sci. Technol. B 19, 1572 (2001).
  14. M. Adamcyk, J. H. Schmid, T. Tiedje, A. Koveshnikov, A. Chahboun, V. Fink, and K. L. Kavanagh, Appl. Phys. Lett. 80, 4357 (2002).
  15. J.-H. Zhao, T. Ryan, P. S. Ho, A. J. McKerrow, and W.-Y. Shih, J. Appl. Phys. 85, 6421 (1999).
  16. V. Kumar and B. S. R. Sastry, Cryst. Res. Technol. 36, 565 (2001).
  17. A. Zubrilov, in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York, 2001), pp. 49–66.
  18. N. J. Kadhim and D. Mukherjee, J. Mater. Sci. Lett. 17, 595 (1998).
  19. N. J. Kadhim and D. Mukherjee, Vacuum 55, 249 (1999).
  20. A. Trampert, E. Tournie, and K. H. Ploog, Appl. Phys. Lett. 66, 2265 (1995).
  21. W. Qian, M. Skowronski, R. Kaspi, M. De Graef, and V. P. Dravid, J. Appl. Phys. 81, 7268 (1997).
  22. S. B. Samavedam and E. A. Fitzgerald, J. Appl. Phys. 81, 3108 (1997).
  23. J. S. Speck, M. A. Brewer, G. Beltz, A. E. Romanov, and W. Pompe, J. Appl. Phys. 80, 3808 (1996).
  24. B. W. Dodson and J. Y. Tsao, Phys. Rev. B 38, 12383 (1988).
  25. E. A. Fitzgerald, A. Y. Kim, M. T. Currie, T. A. Langdo, G. Taraschi, and M. T. Bulsara, Mater. Sci. Eng., B 67, 53 (1999).
  26. B. W. Dodson and J. Y. Tsao, Appl. Phys. Lett. 51, 1325 (1987).
  27. J. P. Hirth and J. Lothe, Theory of Dislocations (McGraw-Hill, New York, 1968).
  28. A. Fischer, H. Kühne, M. Eichler, F. Holländer, and H. Richter, Phys. Rev. B 54, 8761 (1996).
  29. R. Beresford, C. Lynch, and E. Chason, J. Cryst. Growth 251, 106 (2003).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics