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Interface-induced phenomena in polarization response of ferroelectric thin films

J. Appl. Phys. 100, 051607 (2006); doi:10.1063/1.2337009

Published 12 September 2006

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A. K. Tagantsev and G. Gerra
Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland
This article reviews the existing theoretical models describing the interface-induced phenomena which affect the switching characteristics and dielectric properties of ferroelectric thin films. Three groups of interface-induced effects are addressed—namely, "passive-layer-type" effects, ferroelectric-electrode contact potential effects, and the poling effect of the ferroelectric-electrode interface. The existing experimental data on dielectric and switching characteristics of ferroelectric thin film capacitors are discussed in the context of the reviewed theories. Special attention is paid to the case of internal bias field effects. ©2006 American Institute of Physics
History: Received 21 March 2006; accepted 28 June 2006; published 12 September 2006
Permalink: http://link.aip.org/link/?JAPIAU/100/051607/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.22.Ej
    Dielectric polarization and depolarization
  • 77.55.+f
    Dielectric thin films
  • 84.32.Tt
    Capacitors
  • 85.50.-n
    Dielectric, ferroelectric, and piezoelectric devices
  • 01.30.Rr
    Surveys and tutorial papers; resource letters
  • 73.40.Cg
    Contact resistance, contact potential
  • YEAR: 2006

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ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (90)
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