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A microscopic procedure has been proposed for evaluating the stress dependence of the (room-temperature) cathodoluminescence (CL) excitonic band emitted from the (0001) crystallographic plane of GaN i...
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Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

J. Appl. Phys. 100, 083516 (2006); doi:10.1063/1.2356604

Published 27 October 2006

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Muhammad B. Haider, Rong Yang, Costel Constantin, Erdong Lu, and Arthur R. Smith
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701

Hamad A. H. Al-Brithen
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701 and Department of Physics, King Saud University, Riyadh 11421, Saudi Arabia
Cubic GaN has been grown under gallium (Ga)-rich growth conditions using radio frequency nitrogen plasma molecular beam epitaxy on MgO(001) substrates. Reflection high energy electron diffraction patterns indicate the smoothness of the c-GaN surface and show 2× and even 8× periodicities after the growth at sample temperature Ts<200  °C and 1×1 at higher temperatures. Scanning tunneling microscopy images reveal a sequence of variant surface reconstructions including c(4×12), 4×7, c(4×16), 4×9, c(4×20), and 4×11. These variant reconstructions correspond to slightly different Ga adatom coverages all less than 1/4 ML, with 4×11 having the highest, and c(4×12) the lowest Ga coverage. The electronic properties of these six variant reconstructions are investigated, and they are found to have a metallic nature. ©2006 American Institute of Physics
History: Received 26 November 2005; accepted 5 July 2006; published 27 October 2006
Permalink: http://link.aip.org/link/?JAPIAU/100/083516/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.35.Bs
    Structure of clean solid surfaces (reconstruction)
  • 68.47.Fg
    Semiconductor surfaces
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films including chemistry induced with STM
  • 73.20.At
    Surface states, band structure, electron density of states
  • YEAR: 2006

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ISSN:
0021-8979 (print)   1089-7550 (online)
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