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Photogating carbon nanotube transistors

J. Appl. Phys. 100, 084306 (2006); doi:10.1063/1.2357413

Published 18 October 2006

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Matthew S. Marcus, J. M. Simmons, and O. M. Castellini
Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, Wisconsin 53706

R. J. Hamers
Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706

M. A. Eriksson
Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, Wisconsin 53706
Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light absorption in the silicon substrate generates a photovoltage that can electrically gate the nanotube device. The photocurrent induced by the changing gate voltage can be significantly larger than that due to direct electron-hole pair generation in the nanotube. The dominance of photogating in these devices is confirmed by the power and position dependence of the resulting photocurrent. The power dependence is strongly nonlinear and photocurrents are measured through the device even when the laser illuminates up to 1  mm from the nanotube. ©2006 American Institute of Physics
History: Received 22 May 2006; accepted 13 July 2006; published 18 October 2006
Permalink: http://link.aip.org/link/?JAPIAU/100/084306/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.35.Kt
    Nanotube devices
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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