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Effect of oxidation on the chemical bonding structure of PECVD SiNx thin films

J. Appl. Phys. 100, 123516 (2006); doi:10.1063/1.2402581

Published 27 December 2006

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Neerushana Jehanathan and Yinong Liu
School of Mechanical Engineering, The University of Western Australia, Crawley, WA6009, Australia

Byron Walmsley and John Dell
School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA6009, Australia

Martin Saunders
Centre for Microscopy and Microanalysis, The University of Western Australia, Crawley, WA6009, Australia
This study investigated the effect of oxidation on the chemical bonding structures of silicon nitride thin films synthesized by a low-temperature plasma-enhanced chemical vapor deposition (PECVD) method. These films were heat treated to different temperatures up to 1373 K. The bonding structures were studied by means of x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. It was found that the amorphous PECVD SiNx films were subjected to oxidation in air at elevated temperatures. The oxidation caused the formation of crystalline silicon dioxide within the matrix of amorphous silicon nitride, conforming to the “random mixing” model. The crystalline silicon dioxide formed is believed to be stoichiometric SiO2, whereas the remaining matrix is believed to be a nonstoichiometric silicon oxynitride with a structure conforming to the “random bonding” model. ©2006 American Institute of Physics
History: Received 12 May 2006; accepted 12 October 2006; published 27 December 2006
Permalink: http://link.aip.org/link/?JAPIAU/100/123516/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 61.50.Lt
    Crystal binding; cohesive energy
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • 79.60.Dp
    Photoelectron spectra of adsorbed layers and thin films
  • 78.30.Hv
    Infrared and Raman spectra in nonmetallic inorganics excluding elemental, II-VI and III-V semiconductors and fullerenes
  • 61.50.Nw
    Crystal stoichiometry
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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