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Nickel atom and ion densities in an inductively coupled plasma with an internal coil

J. Appl. Phys. 101, 013304 (2007); doi:10.1063/1.2401659

Published 4 January 2007

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Lin Xu
Plasma Processing Laboratory, Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204-4004

Nader Sadeghi
Laboratoire de Spectrométrie Physique, University Joseph Fourier-Grenoble and CNRS, 38042, Grenoble, France

Vincent M. Donnelly and Demetre J. Economou
Plasma Processing Laboratory, Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204-4004
The nickel atom density was measured in an inductively coupled argon plasma with an internal Ni coil, as a function of pressure and power, using optical absorption spectroscopy. Nickel atoms were sputtered from the coil and from a separate Ni target under optional target bias. A fraction of the atoms was ionized in the high-density plasma. The gas temperature was determined by analyzing the rovibrational spectra of the second positive system of nitrogen actinometer gas. The electron density was determined by optical emission spectroscopy in combination with a global model. For a pressure of 8–20  mTorr and coil power of 40–200  W, the Ni atom density ranged from 2.7×109  to  1.5×1010  cm−3, increasing strongly with pressure. The Ni atom density first increased with power but saturated at high power levels. The measured Ni atom density agreed fairly well with the predictions of a global model, in particular, at the higher pressures. The model also predicted that the Ni+ ion density greatly increased at higher powers and pressures. Applying 70  W bias on the target electrode increased the Ni atom density by 60%. ©2007 American Institute of Physics
History: Received 3 August 2006; accepted 6 October 2006; published 4 January 2007
Permalink: http://link.aip.org/link/?JAPIAU/101/013304/1
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KEYWORDS and PACS

Keywords
PACS
  • 52.70.Kz
    Optical (ultraviolet, visible, infrared) plasma diagnostic measurements
  • 52.25.Jm
    Ionization of plasmas
  • 52.25.Os
    Emission, absorption, and scattering of electromagnetic radiation from plasmas
  • 52.50.Dg
    Plasma sources
  • YEAR: 2007

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0021-8979 (print)   1089-7550 (online)
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REFERENCES (55)

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  1. International Technology Road Map for Semiconductor (http://www.itrs.net/Common/2005ITRS/Home2005.htm).
  2. S. M. Rossnagel and J. Hopwood, J. Vac. Sci. Technol. B 12, 449 (1994).
  3. S. M. Rossnagel, J. Vac. Sci. Technol. B 16, 2585 (1998).
  4. L. Xu, S. C. Vemula, M. Jain, S. K. Nam, V. M. Donnelly, D. J. Economou, and P. Ruchhoeft, Nano Lett. 5, 2563 (2005).
  5. L. Xu, D. J. Economou, V. M. Donnelly, and P. Ruchhoeft, Appl. Phys. Lett. 87, 041502 (2005).
  6. Y. Tu, Z. P. Huang, D. Z. Wang, J. G. Wen, and Z. F. Ren, Appl. Phys. Lett. 80, 4018 (2002).
  7. S. Hofmann, C. Ducati, J. Robertson, and B. Kleisorge, Appl. Phys. Lett. 83, 135 (2003).
  8. G. S. Duesberg, A. P. Graham, M. Liebau, R. Seidel, E. Unger, F. Kreupl, and W. Hoenlein, Nano Lett. 3, 257 (2003).
  9. S. M. Rossnagel and J. Hopwood, Appl. Phys. Lett. 63, 3285 (1993).
  10. C. A. Nichols, S. M. Rossnagel, and S. Hamaguchi, J. Vac. Sci. Technol. B 14, 3270 (1996).
  11. J. E. Foster, W. Wang, A. E. Wendt, and J. Booske, J. Vac. Sci. Technol. B 16, 532 (1998).
  12. Y. Andrew, I. Abraham, J. H. Booske, Z. C. Lu, and A. E. Wendt, J. Appl. Phys. 88, 3208 (2000).
  13. S. Konstantinidis, A. Ricard, M. Ganciu, J. P. Dauchot, C. Ranea, and M. Hecq, J. Appl. Phys. 95, 2900 (2004).
  14. G. P. Davis and R. A. Gottscho, J. Appl. Phys. 54, 3080 (1983).
  15. R. A. Porter and W. R. Harshbarger, J. Electrochem. Soc. 126, 460 (1979).
  16. V. M. Donnelly and M. V. Malyshev, Appl. Phys. Lett. 77, 2467 (2000).
  17. B. Bai and H. Sawin, J. Vac. Sci. Technol. A 22, 2014 (2004).
  18. J. Derouard and N. Sadeghi, Chem. Phys. Lett. 102, 324 (1983).
  19. J. Derouard and N. Sadeghi, Chem. Phys. 88, 171 (1984).
  20. S. F. Wong and L. Dubé, Phys. Rev. A 17, 570 (1978).
  21. D. W. Setser, D. H. Stedman, and J. A. Coxon, J. Chem. Phys. 53, 1004 (1970).
  22. T. D. Nguyen and N. Sadeghi, Chem. Phys. 79, 41 (1983).
  23. J. Derouard, T. D. Nguyen, and N. Sadeghi, J. Chem. Phys. 72, 6698 (1980).
  24. S. J. Kang, M.S. thesis, University of Houston, 2005.
  25. N. Sadeghi, M. Cheaib, and D. W. Setser, J. Chem. Phys. 90, 219 (1989).
  26. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, 2nd ed. (Wiley, New York, 2005).
  27. E. J. McGuire, Phys. Rev. A 20, 445 (1979).
  28. M. A. Lieberman and S. Ashida, Plasma Sources Sci. Technol. 5, 145 (1996).
  29. C. Lee and M. A. Lieberman, J. Vac. Sci. Technol. A 13, 368 (1995).
  30. D. P. Lymberopoulos and D. J. Economou, J. Appl. Phys. 73, 3668 (1993).
  31. M. V. Malyshev and V. M. Donnelly, Phys. Rev. E 60, 6016 (1999).
  32. T. Weber, J. B. Boffard, and C. C. Lin, Phys. Rev. A 68, 032719 (2003).
  33. G. A. Piech, J. B. Boffard, M. F. Gehrke, L. W. Anderson, and C. C. Lin, Phys. Rev. Lett. 81, 309 (1998).
  34. J. B. Boffard, G. A. Piech, M. F. Gehrke, L. W. Anderson, and C. C. Lin, Phys. Rev. A 59, 2749 (1999).
  35. B. Ramamurthi and D. J. Economou, Plasma Sources Sci. Technol. 11, 324 (2002).
  36. P. Subramonium and M. J. Kushner, J. Vac. Sci. Technol. A 20, 313 (2002).
  37. T. H. Ahn, K. Nakamura, and H. Sugai, Plasma Sources Sci. Technol. 5, 139 (1996).
  38. M. V. Malyshev and V. M. Donnelly, J. Appl. Phys. 90, 1130 (2001).
  39. A. C. G. Mitchell and M. W. Zemansky, Resonance Radiation and Excited Atoms (Cambridge University Press, London, 1971).
  40. N. Sadeghi et al. (unpublished).
  41. G. Nicolussi, W. Husinsky, D. Gruber, and G. Betz, Phys. Rev. B 51, 8779 (1995).
  42. A. Cortona, W. Husinsky, and G. Betz, Phys. Rev. B 59, 15495 (1999).
  43. C. He, Z. Postawa, S. W. Rosencrance, R. Chatterjee, B. J. Garrison, and N. Winogard, Phys. Rev. Lett. 75, 3950 (1995).
  44. E. Vandeweert, V. Philipsen, W. Bouwen, P. Thoen, H. Weidele, R. E. Silverans, and P. Lievens, Phys. Rev. Lett. 78, 138 (1997).
  45. J. S. Gao, K. Sasaki, H. Toyoda, and H. Sugai, Proceedings of 18th Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG), Lecce, Italy, 2006 (unpublished), p. 307.
  46. D. Ohebsian, N. Sadeghi, C. Trassy, and J.-M. Mermet, Opt. Commun. 32, 81 (1980).
  47. M. Kogelschatz, G. Cunge, and N. Sadeghi, J. Phys. D 37, 1954 (2004).
  48. P. Baltayan, F. Hartmann, I. Hikmet, and N. Sadeghi, J. Chem. Phys. 97, 5417 (1992).
  49. P. J. Chantry, J. Appl. Phys. 62, 1141 (1987).
  50. N. Sadeghi et al. (unpublished).
  51. M. W. Thompson, Philos. Mag. 18, 377 (1968).
  52. A. Gras-Marti and J. A. Valles-Abarca, J. Appl. Phys. 54, 1071 (1983).
  53. R. V. Stuart and G. K. Wehner, J. Appl. Phys. 33, 2345 (1962).
  54. H. Matsui, H. Toyoda, and H. Sugai, J. Vac. Sci. Technol. A 23, 671 (2005).
  55. L. A. Riseberg, W. F. Parks, and L. D. Schearer, Phys. Rev. A 8, 1962 (1973).

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