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Giant pop-ins and amorphization in germanium during indentation

J. Appl. Phys. 101, 043524 (2007); doi:10.1063/1.2490563

Published 28 February 2007

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David J. Oliver, Jodie E. Bradby, and Jim S. Williams
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia

Michael V. Swain
Biomaterials Science Research Unit, Faculty of Dentistry, The University of Sydney, Eveleigh, NSW 1430, Australia

Paul Munroe
Electron Microscope Unit, University of New South Wales, Sydney, NSW 2052, Australia
Sudden excursions of unusually large magnitude (>1 µm), “giant pop-ins,” have been observed in the force-displacement curve for high load indentation of crystalline germanium (Ge). A range of techniques including Raman microspectroscopy, focused ion-beam cross sectioning, and transmission electron microscopy, are applied to study this phenomenon. Amorphous material is observed in residual indents following the giant pop-in. The giant pop-in is shown to be a material removal event, triggered by the development of shallow lateral cracks adjacent to the indent. Enhanced depth recovery, or “elbowing,” observed in the force-displacement curve following the giant pop-in is explained in terms of a compliant response of plates of material around the indent detached by lateral cracking. The possible causes of amorphization are discussed, and the implications in light of earlier indentation studies of Ge are considered. ©2007 American Institute of Physics
History: Received 19 September 2006; accepted 26 December 2006; published 28 February 2007
Permalink: http://link.aip.org/link/?JAPIAU/101/043524/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.40.Np
    Fatigue, embrittlement, fracture, and failure including corrosion fatigue and cracking
  • 81.40.Lm
    Deformation, plasticity, and creep
  • 62.20.Mk
    Fatigue, brittleness, fracture, and cracks
  • 62.20.Fe
    Deformation and plasticity including yield, ductility, and superplasticity
  • 78.30.Am
    Infrared and Raman spectra in elemental semiconductors and insulators
  • 61.72.Hh
    Indirect evidence of dislocations and other defects including resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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