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Electrical manipulation of spin-orbit coupling in semiconductor heterostructures

J. Appl. Phys. 101, 081710 (2007); doi:10.1063/1.2722764

Published 27 April 2007

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Vanessa Sih and David D. Awschalom
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
The spin-orbit interaction offers an avenue for the electrical generation and manipulation of electron spin polarization in semiconductors without magnetic materials or magnetic fields. In semiconductor heterostructures, the spin-orbit coupling modifies the electron g factor and introduces momentum-dependent spin splittings. In addition, spin-orbit coupling enables the electrical generation of spin polarization through these spin splittings and the spin Hall effect. Here we present an overview of recent measurements of spin dynamics, spin splittings, and electrically generated spin polarization. We demonstrate manipulation of the spin-orbit coupling using electric and magnetic fields to change the orbital motion of the electrons and using strain and quantum confinement to tune the spin splittings in semiconductor heterostructures. ©2007 American Institute of Physics
History: Received 18 July 2006; accepted 29 September 2006; published 27 April 2007
Permalink: http://link.aip.org/link/?JAPIAU/101/081710/1
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KEYWORDS and PACS

Keywords
PACS
  • 71.70.Ej
    Spin–orbit coupling, Zeeman and Stark splitting, Jahn–Teller effect (condensed matter)
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 71.18.+y
    Fermi surface: calculations and measurements; effective mass, -g factor
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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