Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices
J. Appl. Phys. 101, 081716 (2007); doi:10.1063/1.2722785
Published 27 April 2007
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We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically and electrically injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically injected spin-polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.
©2007 American Institute of Physics
| History: | Received 29 September 2006; accepted 29 November 2006; published 27 April 2007 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/101/081716/1 |
KEYWORDS and PACS
iron,
ferromagnetic materials,
gallium arsenide,
III-V semiconductors,
semiconductor-metal boundaries,
spin polarised transport,
magnetoelectronics,
Kerr magneto-optical effect,
scanning probe microscopy,
Hanle effect,
spin dynamics
- 85.75.-d
Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields - YEAR: 2007
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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