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Annealing induced transition of flat strained InGaAs epilayers into three-dimensional islands

J. Appl. Phys. 101, 106106 (2007); doi:10.1063/1.2736637

Published 25 May 2007

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Dong Jun Kim, E. Addison Everett, and Haeyeon Yang
Department of Physics, Utah State University, Logan, Utah 84322-4415
We report arrays of self-assembled quantum dots through roughening transition of strained but atomically flat layers into three-dimensional (3D) islands. Atomically flat two-dimensional InGaAs epilayers were grown on GaAs(001) substrates below 360  °C. When heated higher than 420  °C, they were observed to undergo roughening transitions. The morphology, height, and width of the resultant 3D features were found to be a strong function of the annealing time and temperature. Furthermore, at a particular set of parameters, dot chains were observed. The strain field of the flat layer seemed uniform in the roughening stage, but appeared to induce anisotropic diffusion at the subsequent growth stage. ©2007 American Institute of Physics
History: Received 19 February 2007; accepted 31 March 2007; published 25 May 2007
Permalink: http://link.aip.org/link/?JAPIAU/101/106106/1
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KEYWORDS and PACS

Keywords
PACS
  • 64.70.Kb
    Solid–solid transitions
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 61.72.Cc
    Kinetics of defect formation and annealing
  • 68.65.Hb
    Quantum dots (structure and nonelectronic properties)
  • 81.07.Ta
    Quantum dots: fabrication and characterization
  • 66.30.Hs
    Self-diffusion and ionic conduction in solid nonmetals
  • YEAR: 2007

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0021-8979 (print)   1089-7550 (online)
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REFERENCES (21)
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  1. P. Bhattacharya, S. Ghosh, and A. D. Stiff-Roberts, Annu. Rev. Mater. Res. 34, 1 (2004).
  2. See, for example, www.zialaser.com and www.innolume.com
  3. M. Henini, Nanoscale Res. Lett. 1, 32 (2006).
  4. S. Kiravittaya, R. Songmuang, A. Rastelli, H. Heidemeyer, and O. G. Schmidt, Nanoscale Res. Lett. 1, 1 (2006).
  5. Z. M. Wang, K. Holmes, Y. I. Mazur, and G. J. Salamo, Appl. Phys. Lett. 84, 1931 (2004).
  6. C. W. Snyder, J. F. Mansfield, and B. G. Orr, Phys. Rev. B 46, 9551 (1992).
  7. M. V. Maximov et al., Appl. Phys. Lett. 75, 2347 (1999).
  8. D. J. Srolovitz, Acta Metall. 37, 621 (1989).
  9. D. J. Kim, D. Cha, G. J. Salamo, and H. Yang, J. Vac. Sci. Technol. B 24, 2776 (2006).
  10. A. Tackeuchi, Y. Nishikawa, and O. Wada, Appl. Phys. Lett. 68, 797 (1996).
  11. H. Lee, R. Lowe-Webb, W. Yang, and P. C. Sercel, Appl. Phys. Lett. 72, 812 (1998).
  12. R. Leon and S. Fafard, Phys. Rev. B 58, R1726 (1998).
  13. F. Patella, M. Fanfoni, F. Arciprete, S. Nufris, E. Placidi, and A. Balzarotti, Appl. Phys. Lett. 78, 320 (2001).
  14. R. Leon, T. J. Senden, Y. Kim, C. Jagadish, and A. Clark, Phys. Rev. Lett. 78, 4942 (1998).
  15. S. Jeppesen, M. S. Miller, D. Hessman, B. Kowalski, I. Maximov, and L. Samuelson, Appl. Phys. Lett. 68, 2228 (1996).
  16. The images were also analyzed using the free software (available at www.nanntec.es).
  17. M. C. Xu, Y. Temko, T. Suzuki, and K. Jacobi, J. Appl. Phys. 98, 083525 (2005).
  18. H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers, and P. M. Thibado, J. Cryst. Growth 201/202, 88 (1999).
  19. E. Penev, S. Stojkovi, P. Kratzer, and M. Scheffler, Phys. Rev. B 69, 115335 (2004).
  20. H. Yang, P. Ballet, and G. J. Salamo, J. Appl. Phys. 89, 7871 (2001).
  21. H. Yang, X. Mu, I. B. Zotova, Y. J. Ding, and G. J. Salamo, J. Appl. Phys. 91, 3925 (2001).

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