A molecular dynamics study of nanoindentation of amorphous silicon carbide
J. Appl. Phys. 102, 023509 (2007); doi:10.1063/1.2756059
Published 18 July 2007
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Through molecular dynamics simulation of nanoindentation of amorphous a-SiC, we have found a correlation between its atomic structure and the load-displacement (P-h) curve. We show that a density profile of a-SiC exhibits oscillations normal to the surface, analogous to liquid metal surfaces. Short-range P-h response of a-SiC is similar to that of crystalline 3C-SiC, e.g., it shows a series of load drops associated with local rearrangements of atoms. However, the load drops are less pronounced than in 3C-SiC due to lower critical stress required for rearrangement of local clusters of atoms. The nanoindentation damage is less localized than in 3C-SiC. The maximum pressure under the indenter is 60% lower than in 3C-SiC with the same system geometry. The onset of plastic deformation occurs at the depth of 0.5 Å, which is ~25% of the corresponding value in 3C-SiC. a-SiC exhibits lower damping as compared to 3C-SiC, which is reflected in the longer relaxation time of transient forces after each discrete indentation step.
©2007 American Institute of Physics
| History: | Received 12 April 2007; accepted 30 May 2007; published 18 July 2007 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/102/023509/1 |
KEYWORDS and PACS
molecular dynamics method,
indentation,
silicon compounds,
amorphous state,
plastic deformation,
damping
- 62.20.Mk
Fatigue, brittleness, fracture, and cracks - 81.40.Np
Fatigue, embrittlement, fracture, and failure including corrosion fatigue and cracking - 81.40.Lm
Deformation, plasticity, and creep - 62.20.Fe
Deformation and plasticity including yield, ductility, and superplasticity - 62.40.+i
Anelasticity, internal friction, stress relaxation, and mechanical resonances - YEAR: 2007
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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