Magnetoresistance in epitaxially grown MnAs films on GaAs substrates
Magnetotransport properties of epitaxially grown MnAs(100) films on GaAs(001) substrates were investigated. The thickness of the films was adjusted to 250 nm, which is the characteristic thickness for...
Magnetotransport properties of epitaxially grown MnAs(100) films on GaAs(001) substrates were investigated. The thickness of the films was adjusted to 250 nm, which is the characteristic thickness for...
Microstructure, phase transition, and electrical properties of (K0.5Na0.5)1−xLix(Nb1−yTay)O3 lead-free piezoelectric ceramics
Lead-free ceramics (K0.5Na0.5)1−xLix(Nb1−yTay)O3 have been prepared by an ordinary sintering technique. Our results reveal that Li+ and Ta5+ diffuse into the K0.5Na0.5NbO3 lattices to form...
Lead-free ceramics (K0.5Na0.5)1−xLix(Nb1−yTay)O3 have been prepared by an ordinary sintering technique. Our results reveal that Li+ and Ta5+ diffuse into the K0.5Na0.5NbO3 lattices to form...
Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si
J. Appl. Phys. 102, 034101 (2007); doi:10.1063/1.2764223
Published 2 August 2007
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HfO2 thin films have been deposited by an atomic layer deposition (ALD) process using alternating pulses of tetrakis-ethylmethylamino hafnium and H2O precursors at 250 °C. The as-deposited films are mainly amorphous and nearly stoichiometric HfO2 (O/Hf ratio ~1.9) with low bonded carbon content (~3 at. %). A comparison of the nucleation stage of the films on OH- and H-terminated Si(100) surfaces has been performed using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). We find for the initial 5–7 process cycles that the film nucleates more efficiently on the OH-terminated surface. However, after the 7th cycle both surfaces exhibit similar surface coverage, which takes about 40 cycles to reach a steady growth rate per cycle. Angle resolved XPS measurements reveal the formation of a ~6 Å interfacial layer after four ALD cycles on the H-terminated surface and the thickness of the interfacial layer does not change substantially between the 4th and the 50th process cycles as shown by transmission electron microscopy. Although the surface coverage is comparable for both starting surfaces, film measurements performed by SE suggest that thick films deposited on H-terminated Si are ~5% thicker than similar films on the chemical oxide surface. Atomic force microscopy (AFM) measurements reveal higher surface roughness for the films deposited in the H-terminated surface. The SE and the AFM data are consistent with higher porosity for the films on H-terminated surfaces.
©2007 American Institute of Physics
| History: | Received 24 April 2007; accepted 13 June 2007; published 2 August 2007 |
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http://link.aip.org/link/?JAPIAU/102/034101/1 |
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Connotea
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del.icio.us
BibSonomy
KEYWORDS and PACS
amorphous state,
atomic force microscopy,
atomic layer deposition,
elemental semiconductors,
ellipsometry,
hafnium compounds,
high-k dielectric thin films,
nucleation,
porosity,
Rutherford backscattering,
silicon,
surface roughness,
transmission electron microscopy,
X-ray photoelectron spectra
- 77.55.+f
Dielectric thin films - 68.55.Ac
Thin film nucleation and growth: microscopic aspects - 81.15.Gh
Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc - 81.15.Ef
Vacuum deposition - 68.37.Ps
Atomic force microscopy (AFM) of surfaces, interfaces and thin films - 79.60.Bm
Photoelectron spectra of clean metal, semiconductor, and insulator surfaces - YEAR: 2007
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
AIP
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