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Nitrogen incorporation and optical studies of GaAsSbN/GaAs single quantum well heterostructures

J. Appl. Phys. 102, 053106 (2007); doi:10.1063/1.2777448

Published 11 September 2007

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Kalyan Nunna, S. Iyer, L. Wu, J. Li, and S. Bharatan
North Carolina A&T State University, Greensboro, North Carolina 27411, USA

X. Wei
NHMFL Florida State University, Tallahassee, Florida 32310, USA

R. T. Senger
Department of Physics, Bilkent University, 06800 Ankara, Turkey

K. K. Bajaj
Department of Physics, Emory University, Atlanta, Georgia 30322, USA
In this work, the effects of N incorporation on the optical properties of GaAsSbN/GaAs single quantum wells (SQWs) have been investigated using temperature, excitation, and magnetic dependencies of photoluminescence (PL) characteristics. These layers were grown in an elemental solid source molecular beam epitaxy system with a rf plasma N source. The N concentrations in the range of 0.5%–2.5% were investigated in this study. The SQW with N~0.5% exhibits a behavior similar to that in an intermediate regime where the contributions from the localized states in the band gap are dominant. The temperature and excitation dependencies of the PL characteristics indicate that for the N concentration of 0.9% and above, the alloy behavior is analogous to that of a regular alloy and the changes in optical properties are only marginal. The conduction band effective mass (meff) values computed from the magnetophotoluminescence spectra using a variational formalism and the band anticrossing model are in good agreement and indicate enhanced values of meff. However, there is no significant variation in meff values of QWs for N>=0.9%. Small redshift of about 30–50  meV for the temperature variations from 10  to  300  K in conjunction with unusually small blueshift observed in the excitation dependence of PL for N>=0.9% indicate that this system holds a great promise for laser applications at 1.55  µm and beyond. ©2007 American Institute of Physics
History: Received 19 March 2007; accepted 20 July 2007; published 11 September 2007
Permalink: http://link.aip.org/link/?JAPIAU/102/053106/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.67.De
    Optical properties of quantum wells
  • 78.55.Cr
    Photoluminescence in III–V semiconductors
  • 73.21.Fg
    Quantum wells (electron states/collective excitations)
  • 78.20.Ls
    Magnetooptical effects (bulk materials/thin films)
  • 71.18.+y
    Fermi surface: calculations and measurements; effective mass, -g factor
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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