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Tailoring the carrier mobility of semiconductor nanowires by remote dielectrics

J. Appl. Phys. 102, 123705 (2007); doi:10.1063/1.2825615

Published 26 December 2007

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Aniruddha Konar and Debdeep Jena
Department of Physics and Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
The dielectric environment of thin semiconductor nanowires can affect the charge transport properties inside the wire. In this work, it is shown that Coulomb impurity scattering in thin nanowires can be damped strongly by coating the wire with a high-kappa dielectric. This leads to an increase in the mobility of free charges inside the wire and can be used as a post-growth technique to improve the conductivity of thin nanowires. ©2007 American Institute of Physics
History: Received 14 October 2007; accepted 24 October 2007; published 26 December 2007
Permalink: http://link.aip.org/link/?JAPIAU/102/123705/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.07.Vb
    Quantum wires: fabrication and characterization
  • 73.63.Nm
    Quantum wires (electronic transport)
  • 73.50.Dn
    Low-field transport and mobility; piezoresistance (thin films)
  • 72.20.Fr
    Low-field transport and mobility; piezoresistance (semiconductors/insulators)
  • 73.21.Hb
    Quantum wires (electron states/collective excitations)
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (12)
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