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Linear and nonlinear conductance of ballistic quantum wires with hybrid confinement

J. Appl. Phys. 103, 013701 (2008); doi:10.1063/1.2827466

Published 7 January 2008 | See: Erratum

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H. Kothari, A. Ramamoorthy, R. Akis, S. M. Goodnick, and D. K. Ferry
Arizona Institute of Nanoelectronics, Arizona State University, Tempe, Arizona 85287-5706, USA

J. L. Reno
Center for Integrated Nanotechnologies, Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185-1303, USA

J. P. Bird
Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14216, USA
We characterize the linear and nonlinear electron transport in quantum point contacts (QPCs) realized by a hybrid combination of etching and gating. We demonstrate that the strong electron confinement generated through this hybrid QPC process results in quantized subbands with a large energy separation, leading to the observation of robust one-dimensional quantum-transport effects. Measurements of the nonlinear differential conductance reveal an unexpected bunching of curves at 0.20−0.25×2e2/h, rather than at the expected value of 0.5×2e2/h. Application of a simple analytical model indicates that this bunching is associated with the highly asymmetric manner in which the source-drain voltage is dropped across the QPC near pinch-off and under nonequilibrium conditions. ©2008 American Institute of Physics
History: Received 17 September 2007; accepted 9 November 2007; published 7 January 2008; publisher error corrected 8 January 2008
Permalink: http://link.aip.org/link/?JAPIAU/103/013701/1
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ERRATUM

  1. Erratum: “Linear and nonlinear conductance of ballistic quantum wires with hybrid confinement” [J. Appl. Phys. 103, 013701 (2008)]
    H. Kothari et al.
    J. Appl. Phys. 103, 099901 (2008)

KEYWORDS and PACS

Keywords
PACS
  • 73.63.Nm
    Quantum wires (electronic transport)
  • 73.63.Rt
    Nanoscale contacts (electronic transport)
  • 73.23.Ad
    Ballistic transport (mesoscopic systems)
  • 73.40.Kp
    Electrical properties of III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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