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Origin of the dependence of magnetoresistance on the composition of Co100−xFex electrodes in magnetic tunnel junctions

J. Appl. Phys. 103, 056102 (2008); doi:10.1063/1.2840128

Published 5 March 2008

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J. Joshua Yang,1 A. K. Bengtson,2 C.-X. Ji,2 D. Morgan,2 and Y. A. Chang2
1Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
2Department of Materials Science and Engineering and Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
The tunneling magnetoresistance value of a Co100−xFex (4  nm)/AlOx 1.7  nm/Co100−xFex (4  nm) magnetic tunnel junction has been demonstrated to depend on the composition of the Co100−xFex electrodes. The interface roughness, crystal structure, and tunneling spin polarization versus the composition of the Co100−xFex electrode were studied to address the origin of this compositional dependence. Ab initio calculations of s-like electron spin polarization predict a composition dependence similar to that observed experimentally. The combined experimental and computational results show that the trends in Co100−xFex tunneling magnetoresistance are modified slightly by the interface roughness but mainly determined by the s-like electron spin polarization values associated with different compositions and crystal structures. ©2008 American Institute of Physics
History: Received 16 July 2007; accepted 9 December 2007; published 5 March 2008
Permalink: http://link.aip.org/link/?JAPIAU/103/056102/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.47.-m
    Magnetotransport phenomena; materials for magnetotransport
  • 68.35.Ct
    Solid-solid interface structure and roughness
  • 75.50.Bb
    Ferromagnetism of Fe and its alloys
  • 72.25.-b
    Spin polarized transport
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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