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Carrier concentration tuning of bandgap-reduced p-type ZnO films by codoping of Cu and Ga for improving photoelectrochemical response

J. Appl. Phys. 103, 073504 (2008); doi:10.1063/1.2888578

Published 1 April 2008

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Sudhakar Shet,1,2 Kwang-Soon Ahn,1 Yanfa Yan,1 Todd Deutsch,1 Kevin M. Chrustowski,1 John Turner,1 Mowafak Al–Jassim,1 and Nuggehalli Ravindra2
1National Renewable Energy Laboratory, Golden, Colorado 80401, USA
2New Jersey Institute of Technology, Newark, New Jersey 07102, USA
In this study, the synthesis of p-type ZnO films with similar bandgaps but varying carrier concentrations through codoping of Cu and Ga is reported. The ZnO:(Cu,Ga) films are synthesized by rf magnetron sputtering in O2 gas ambient at room temperature, followed by postdeposition annealing at 500  °C in air for 2  h. The bandgap reduction and p-type conductivity are caused by the incorporation of Cu. The tuning of carrier concentration is realized by varying the Ga concentration. The carrier concentration tuning does not significantly change the bandgap and crystallinity. However, it can optimize the carrier concentration to significantly enhance the photoelectrochemical response for bandgap-reduced p-type ZnO thin films. ©2008 American Institute of Physics
History: Received 8 November 2007; accepted 28 December 2007; published 1 April 2008
Permalink: http://link.aip.org/link/?JAPIAU/103/073504/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.61.Ga
    Electrical properties of II-VI semiconductors (thin films)
  • 73.50.-h
    Electronic transport phenomena in thin films
  • 72.20.-i
    Electrical conductivity phenomena in semiconductors and insulators
  • 68.55.Ln
    Thin film defects and impurities
  • 61.72.uj
    Doping and impurity implantation in III-V and II-VI semiconductors
  • 82.45.Vp
    Semiconductor materials in electrochemistry
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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