Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
   
 
 
 
Previous Article
Size-dependent surface stress, surface stiffness, and Young's modulus of hexagonal prism [111] beta-SiC nanowires
The present work studies the size-dependent surface stress, surface stiffness, and Young's modulus of a prism crystalline nanowire, which is theoretically treated to be composed of a hypothetical nano...
Next Article
Evidence of nonparabolicity and size of wave function confined in In0.53Ga0.47As/In0.52Al0.48As multi quantum wells
Nonparabolicity of the conduction band in In0.53Ga0.47As was analyzed using nanoscale InGaAs/InAlAs multi quantum well structures. The nonparabolic effective mass was determined from a set of eigen-en...

Arsenic dependence on the morphology of ultrathin GaAs layers on In0.53Ga0.47As/InP(001)

J. Appl. Phys. 103, 104309 (2008); doi:10.1063/1.2917276

Published 27 May 2008

You are not logged in to this journal. Log in

Jennifer Y. Lee,1 Chris Pearson,2 and Joanna M. Millunchick1
1Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109, USA
2Department of Computer Science, Engineering Science, and Physics, The University of Michigan-Flint, Flint, Michigan 48502, USA
Thin GaAs films grown on lattice-matched In0.53Ga0.47As/InP(001) have been imaged by in vacuo scanning tunneling microscopy. We observe that the morphological evolution of these strained films depends on the deposition and diffusion of group III adatoms and the incorporation of As from the vapor, in addition to Asaro–Tiller–Grinfeld instabilities. We compare step edge densities to a model for the Ga adatom density and find that the absolute magnitude of the group V and group III fluxes has a strong effect on the number of adatoms on the surface and, thus, the morphology of the films. ©2008 American Institute of Physics
History: Received 7 February 2008; accepted 3 March 2008; published 27 May 2008
Permalink: http://link.aip.org/link/?JAPIAU/103/104309/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (400 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films
  • 81.16.Ta
    Atom manipulation in nanofabrication and processing
  • 81.10.Bk
    Crystal growth from vapor
  • 81.10.Dn
    Crystal growth from solutions
  • 81.15.-z
    Methods of deposition of films and coatings
  • YEAR: 2008

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (29)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. K. L. Averett, X. Wu, M. W. Koch, and G. W. Wicks, J. Cryst. Growth 251, 852 (2003).
  2. A. D. Yoffe, Adv. Phys. 50, 1 (2001).
  3. I. Tangring, S. M. Wang, Q. F. Gu, Y. Q. Wei, M. Sadeghi, A. Larsson, Q. X. Zhao, M. N. Akram, and J. Berggren, Appl. Phys. Lett. 86, 171902 (2005).
  4. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
  5. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).
  6. Y. Suzuki, Y. Ohmori, and H. Okamoto, J. Appl. Phys. 59, 3760 (1986).
  7. E. S. Tok, J. H. Neave, M. R. Fahy, F. E. Allegretti, J. Zhang, T. S. Jones, and B. A. Joyce, Microelectron. J. 28, 833 (1997).
  8. L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. LeRoux, Appl. Phys. Lett. 47, 1099 (1985);
    9. D. Leonard, K. Pond, and P. M. Petroff, Phys. Rev. B 50, 11687 (1994);
    J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994);
    A. Ponchet, A. H. L'Haridon, B. Lambert, and S. Salaun, ibid. 67, 1850 (1995).
  9. L. Porte, J. Cryst. Growth 273, 136 (2004).
  10. R. J. Asaro and W. A. Tiller, Metall. Trans. 3, 1789 (1972);
    11. M. A. Grinfeld, Sov. Phys. Dokl. 31, 831 (1986);
    D. Srolovitz, Acta Metall. 37, 621 (1989);
    B. J. Spencer, P. W. Voorhees, and S. H. Davis, J. Appl. Phys. 73, 4955 (1993).
  11. M. Hata, T. Isu, A. Watanabe, and Y. Katayama, J. Vac. Sci. Technol. B 8, 692 (1990).
  12. A. Yamashiki and T. Nishinaga, J. Cryst. Growth 198, 1125 (1999).
  13. T. Nishinaga, X. Q. Shen, and D. Kishimoto, J. Cryst. Growth 163, 60 (1996).
  14. M. Lopez and Y. Nomura, J. Cryst. Growth 150, 68 (1995).
  15. T. Sugaya, T. Nakagawa, Y. Sugiyama, T. Tanuma, and K. Yonei, Jpn. J. Appl. Phys., Part 1 36, 5670 (1997).
  16. T. Ogura and T. Nishinaga, J. Cryst. Growth 211, 416 (2000).
  17. C. Pearson, C. Dorin, J. M. Millunchick, and B. G. Orr, Phys. Rev. Lett. 92, 056101 (2004).
  18. P. Krapf, Y. Robach, M. Gendry, and L. Porte, J. Cryst. Growth 181, 337 (1997);
    19. N. S. Chokshi and J. M. Millunchick, Appl. Phys. Lett. 76, 2382 (2000).
  19. M. Sowwan, Y. Yacoby, J. Pitney, R. MacHarrie, M. Hong, J. Cross, D. A. Walko, R. Clarke, R. Pindak, and E. A. Stern, Phys. Rev. B 66, 205311 (2002).
  20. D. P. Kumah, J. Y. Lee, C. N. Cionca, A. Riposan, J. M. Millunchick, and R. Clarke (unpublished).
  21. R. M. Tromp and J. B. Hannon, Surf. Rev. Lett. 9, 1565 (2002).
  22. P. Kratzer, E. Penev, and M. Scheffler, Appl. Phys. A: Mater. Sci. Process. 75, 79 (2002).
  23. J. Tersoff, M. D. Johnson, and B. G. Orr, Phys. Rev. Lett. 78, 282 (1997).
  24. Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and K. Mullen, Phys. Rev. Lett. 90, 216109 (2003).
  25. A. Riposan, G. K. M. Martin, M. Bouville, M. L. Falk, and J. M. Millunchick, Surf. Sci. 525, 222 (2003).
  26. K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
  27. H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers, and P. M. Thibado, J. Cryst. Growth 201, 88 (1999).
  28. C. Chatillon, I. Ansara, A. Watson, and B. Argent, CALPHAD: Comput. Coupling Phase Diagrams Thermochem. 14, 203 (1990).
  29. D. M. Holmes, J. G. Belk, J. L. Sudijono, J. H. Neave, T. S. Jones, and B. A. Joyce, Appl. Phys. Lett. 67, 2848 (1995).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics