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Theory of photoemission from cesium antimonide using an alpha-semiconductor model

J. Appl. Phys. 104, 044907 (2008); doi:10.1063/1.2967826

Published 28 August 2008

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Kevin L. Jensen,1 Barbara L. Jensen,2 Eric J. Montgomery,2 Donald W. Feldman,2 Patrick G. O'Shea,2 and Nathan Moody3
1Code 6843, ESTD, Naval Research Laboratory, Washington, DC 20375-5347, USA
2Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742-3511, USA
3Los Alamos National Laboratory, Los Alamos, New Mexico 87545-1362, USA
A model of photoemission from cesium antimonide (Cs3Sb) that does not rely on adjustable parameters is proposed and compared to the experimental data of Spicer [Phys. Rev. 112, 114 (1958)] and Taft and Philipp [Phys. Rev. 115, 1583 (1959)]. It relies on the following components for the evaluation of all relevant parameters: (i) a multidimensional evaluation of the escape probability from a step-function surface barrier, (ii) scattering rates determined using a recently developed alpha-semiconductor model, and (iii) evaluation of the complex refractive index using a harmonic oscillator model for the evaluation of reflectivity and extinction coefficient. ©2008 American Institute of Physics
History: Received 29 April 2008; accepted 8 June 2008; published 28 August 2008
Permalink: http://link.aip.org/link/?JAPIAU/104/044907/1
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KEYWORDS and PACS

Keywords
PACS
  • 79.60.-i
    Photoemission and photoelectron spectra (condensed matter)
  • 78.20.Ci
    Optical constants
  • YEAR: 2008

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ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (65)
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