Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001)
We have measured the absorption coefficient at the fundamental band edge in Ga1−yInyAs1−xNx and GaAs1−xNx alloys. In contrast to what is observed in most III-V semiconductors, the ab...
Next Article
Shock response of a gamma titanium aluminide
Potential use of -TiAl alloys in aerospace and other structural applications require knowledge of their impact behavior for better evaluation and modeling. In the present study plate impact experiment...

Delta-doping optimization for high quality p-type GaN

J. Appl. Phys. 104, 083512 (2008); doi:10.1063/1.3000564

Published 22 October 2008

You are not logged in to this journal. Log in

C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
Delta (delta−) doping is studied in order to achieve high quality p-type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the delta-doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different delta-doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 1018  cm−3 and superior crystal quality compared to conventional p-GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in delta-doped p-GaN. ©2008 American Institute of Physics
History: Received 18 February 2008; accepted 29 August 2008; published 22 October 2008
Permalink: http://link.aip.org/link/?JAPIAU/104/083512/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (703 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 61.72.U-
    Doping and impurity implantation in crystals
  • 78.55.Cr
    Photoluminescence in III-V semiconductors
  • 78.20.Ci
    Optical constants
  • 61.66.Fn
    Crystal structure of specific inorganic compounds
  • 61.72.Cc
    Kinetics of defect formation and annealing
  • YEAR: 2008

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (26)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. P. Kung, A. Yasan, R. McClintock, S. R. Darvish, K. Mi, and M. Razeghi, Proc. SPIE 4650, 199 (2002).
  2. M. Razeghi, Proc. IEEE 90, 1006 (2002).
  3. O. Ambacher, J. Phys. D 31, 2653 (1998).
  4. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 28, L2112 (1989).
  5. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys., Part 2 31, L139 (1992).
  6. P. Kozodoy, S. Keller, S. P. DenBaars, and U. K. Mishra, J. Cryst. Growth 195, 265 (1998).
  7. T. Li, C. Simbrunner, M. Wegscheider, A. Navarro-Quezada, M. Quast, K. Schmidegg, and A. Bonanni, J. Cryst. Growth 310, 13 (2008).
  8. U. Kaufmann, P. Scholetter, H. Obloh, K. Kohler, and M. Maier, Phys. Rev. B 62, 10867 (2000).
  9. S. Hautakangas, V. Ranki, I. Makkonen, M. J. Puska, K. Saarinen, L. Liszkay, D. Seghier, H. P. Gislason, J. A. Freitas, Jr., R. L. Henry, X. Xu, and D. C. Look, Physica B (Amsterdam) 376–377, 424 (2006).
  10. S. Hautakangas, K. Saarinen, L. Liszzkay, J. A. Freitas, Jr., and R. L. Henry, Phys. Rev. B 72, 165303 (2005).
  11. F. Schubert, J. Vac. Sci. Technol. A 8, 2980 (1990), Part 2.
  12. S. P. Guo, W. Lin, X. Zhou, M. C. Tamargo, C. Tian, I. Kuskovsky, and G. F. Neumark, J. Appl. Phys. 90, 1725 (2001).
  13. H. Wang, J. Liu, N. Niu, G. Shen, and S. Zhang, J. Cryst. Growth 304, 7 (2007).
  14. M. L. Nakarmi, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 3041 (2003).
  15. K. H. Kim, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 83, 566 (2003).
  16. C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, Appl. Phys. Lett. 92, 241103 (2008).
  17. F. Schubert, Doping in III-V Semiconductors (Cambridge, New York, 1993), pp. 433–471.
  18. C. Simbrunner, M. Wegscheider, M. Quast, T. Li, A. Navarro-Quezada, H. Sitter, and A. Bonanni, Appl. Phys. Lett. 90, 142108 (2007).
  19. S. Hautakangas, K. Saarinen, L. Liszzkay, J. A. Freitas, Jr., and R. L. Henry, Phys. Rev. B 72, 165303 (2005).
  20. J. Neugebauer and C. G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995).
  21. T. Metzger, R. Hőpler, E. Born, O. Ambacher, M. Stutzmann, R. Stőmmer, M. Schuster, H. Gőbel, S. Christiansen, M. Albrecht, and H. P. Strunk, Philos. Mag. A 77, 1013 (1998).
  22. U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Scholetter, Appl. Phys. Lett. 72, 1326 (1998).
  23. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, H. Morkoc, and B. Goldenberg, Appl. Phys. Lett. 68, 1883 (1996).
  24. P. P. Debye and E. M. Conwell, Phys. Rev. 93, 693 (1954).
  25. P. Kozodoy, H. Xing, S. P. Denbaars, U. K. Mishra, A. Saxler, R. Perrin, S. Elhamri, and W. C. Mitchel, J. Appl. Phys. 87, 1832 (2000).
  26. W. Gotz, R. S. Kern, C. H. Chen, H. Liu, D. A. Steigerwald, and R. M. Fletcher, Mater. Sci. Eng., B 59, 211 (1999).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics