Electron transport properties of undoped SnO2 monocrystals
Using low-resistance indium contacts, we measured some transport properties of undoped vapor-liquid-solid grown tin oxide monocrystals with a belt shape. From the transport measurements, the two follo...
Using low-resistance indium contacts, we measured some transport properties of undoped vapor-liquid-solid grown tin oxide monocrystals with a belt shape. From the transport measurements, the two follo...
Effects of electron scattering at metal-nonmetal interfaces on electron-phonon equilibration in gold films
Electron scattering at interfaces between metals and dielectrics is a major concern in thermal boundary conductance studies. This aspect of energy transfer has been extensively studied and modeled on ...
Electron scattering at interfaces between metals and dielectrics is a major concern in thermal boundary conductance studies. This aspect of energy transfer has been extensively studied and modeled on ...
Capacitance hysteresis in GaN/AlGaN heterostructures
J. Appl. Phys. 105, 023709 (2009); doi:10.1063/1.3068179
Published 26 January 2009
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Capacitance characteristics with voltage and frequency of n+-GaN/AlxGa1−xN heterojunction ultraviolet (UV)-infrared (IR) photodetectors are reported. A distinct capacitance step and capacitance hysteresis have been attributed to trap energy states located just above the Fermi level at the GaN/AlGaN interface, most likely due to N-vacancy and/or C-donor impurities. The presence of the hysteresis is due to the accumulation of charge at the heterointerface, which is dependent on the location of the continuum of interface trap states relative to the Fermi level. The Al fraction in the barrier layer has been found to significantly change the positions of the interface trap states relative to the Fermi level.
©2009 American Institute of Physics
| History: | Received 9 September 2008; accepted 3 December 2008; published 26 January 2009 |
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http://link.aip.org/link/?JAPIAU/105/023709/1 |
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