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Thermoelectric properties of p-type LiZnSb: Assessment of ab initio calculations

J. Appl. Phys. 105, 063701 (2009); doi:10.1063/1.3091267

Published 17 March 2009

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Eric S. Toberer, Andrew F. May, Cidney J. Scanlon, and G. Jeffery Snyder
Materials Science, California Institute of Technology, Pasadena, California 91125, USA
In response to theoretical calculations on the thermoelectric performance of LiZnSb, we report the pertinent transport properties between room temperature and 523 K. Nominal LiZnSb samples are found to be p-type, with a carrier concentration in the range (4–7)×1020  cm−3. The thermoelectric figure of merit (zT) is found to be 0.02–0.08 at 523 K. Analysis of material transport parameters and previously reported ab initio calculations demonstrates that even with optimal doping, p-type LiZnSb is unlikely to achieve zT>0.2 at 523 K. The accuracy of the high zT estimate (zT>2) for n-type compositions from ab initio calculations is discussed within the current synthetic limits. ©2009 American Institute of Physics
History: Received 25 November 2008; accepted 27 January 2009; published 17 March 2009
Permalink: http://link.aip.org/link/?JAPIAU/105/063701/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.20.Pa
    Thermoelectric and thermomagnetic effects (semiconductors/insulators)
  • 72.80.Jc
    Electrical conductivity of other crystalline inorganic semiconductors
  • 61.72.up
    Doping and impurity implantation in other materials
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (23)
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