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The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study

J. Appl. Phys. 105, 064511 (2009); doi:10.1063/1.3093688

Published 24 March 2009

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Yung Ho Kahng,1 Wei Lu,1 R. G. Tobin,1 Reza Loloee,2 and Ruby N. Ghosh2
1Department of Physics and Astronomy, Tufts University, Medford, Massachusetts 02155, USA
2Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, USA
We report several experiments under ultrahigh vacuum conditions that elucidate the role of oxygen in the functioning of silicon carbide field-effect gas sensors with nonporous platinum gates. The devices studied are shown to be sensitive both to hydrogen and to propene. All of the results are consistent with oxygen acting through its surface reactions with hydrogen. Three specific aspects are highlighted: the need, under some conditions, for oxygen to reset the device to a fully hydrogen-depleted state; competition between hydrogen oxidation and hydrogen diffusion to metal/oxide interface sites, leading to steplike behavior as a function of the oxygen:hydrogen ratio (lambda-sensing); and the removal of sulfur contamination by oxygen. ©2009 American Institute of Physics
History: Received 6 November 2008; accepted 28 January 2009; published 24 March 2009
Permalink: http://link.aip.org/link/?JAPIAU/105/064511/1
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KEYWORDS and PACS

Keywords
PACS
  • 07.07.Df
    Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
  • 82.80.-d
    Chemical analysis and related physical methods of analysis
  • 82.65.+r
    Surface and interface chemistry; heterogeneous catalysis at surfaces
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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