Effects of carrier mobility and morphology in organic semiconductor spin valves
J. Appl. Phys. 105, 07C708 (2009); doi:10.1063/1.3068468
Published 27 February 2009
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We studied spin transport in four organic semiconductors (OSCs) with different electronic properties. Magnetoresistance (MR) effects were observed up to room temperature in junctions based on an electron-carrying OSC, tris(8-hyroxyquinoline) aluminum (Alq3) and a hole-carrying OSC, copper phthalocyanine (CuPc). The MR shows similar temperature dependence for these two OSCs. We also investigated junctions based on two high lateral mobility electron-carrying OSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N
-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide (CF3-NTCDI). However, these junctions showed much weaker spin transport effects. Morphological studies suggest that these high mobility OSC films have much rougher surfaces than either Alq3 or CuPc, therefore the degradation of spin transport may originate from enhanced scattering due to the rougher FM/OSC interfaces. Our study shows that FM/OSC interfaces play an important role for spin transport in organic devices and need further exploration.
©2009 American Institute of Physics
-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide (CF3-NTCDI). However, these junctions showed much weaker spin transport effects. Morphological studies suggest that these high mobility OSC films have much rougher surfaces than either Alq3 or CuPc, therefore the degradation of spin transport may originate from enhanced scattering due to the rougher FM/OSC interfaces. Our study shows that FM/OSC interfaces play an important role for spin transport in organic devices and need further exploration.
©2009 American Institute of Physics
| History: | Presented 11 November 2008; received 17 September 2008; accepted 5 November 2008; published 27 February 2009 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/105/07C708/1 |
KEYWORDS and PACS
cobalt,
electron mobility,
ferromagnetic materials,
hole mobility,
iron,
magnetoresistance,
organic compounds,
organic semiconductors,
rough surfaces,
semiconductor-metal boundaries,
spin valves
- 75.70.Cn
Magnetic properties of interfaces - 85.70.Kh
Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc - 85.75.-d
Magnetoelectronics; spintronics - 73.40.Ns
Electrical properties of metal-nonmetal contacts - 75.47.Pq
Magnetotransport phenomena in other materials - 72.20.Ee
Mobility edges; hopping transport (semiconductors/insulators) - YEAR: 2009
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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