Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
   
 
 
 
Previous Article
Tunneling magnetoresistance in (Ga,Mn)As/Al–O/CoFeB hybrid structures
Tunneling magnetoresistance (TMR) in Ga0.92Mn0.08As/Al–O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field |H|2000  Oe has been stu...
Next Article
Conductance modulation and spin polarization in anisotropic Rashba ring interferometers
We investigate the ballistic spin and charge transport in an anisotropic Rashba ring interferometer with an asymmetry due to either (i) a variable azimuthal position (c) of the collector electrode, or...

Effects of carrier mobility and morphology in organic semiconductor spin valves

J. Appl. Phys. 105, 07C708 (2009); doi:10.1063/1.3068468

Published 27 February 2009

You are not logged in to this journal. Log in

Yaohua Liu,1 Taegweon Lee,2 Howard E. Katz,2 and Daniel H. Reich1
1Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
2Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland 21218, USA
We studied spin transport in four organic semiconductors (OSCs) with different electronic properties. Magnetoresistance (MR) effects were observed up to room temperature in junctions based on an electron-carrying OSC, tris(8-hyroxyquinoline) aluminum (Alq3) and a hole-carrying OSC, copper phthalocyanine (CuPc). The MR shows similar temperature dependence for these two OSCs. We also investigated junctions based on two high lateral mobility electron-carrying OSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N[prime]-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide (CF3-NTCDI). However, these junctions showed much weaker spin transport effects. Morphological studies suggest that these high mobility OSC films have much rougher surfaces than either Alq3 or CuPc, therefore the degradation of spin transport may originate from enhanced scattering due to the rougher FM/OSC interfaces. Our study shows that FM/OSC interfaces play an important role for spin transport in organic devices and need further exploration. ©2009 American Institute of Physics
History: Presented 11 November 2008; received 17 September 2008; accepted 5 November 2008; published 27 February 2009
Permalink: http://link.aip.org/link/?JAPIAU/105/07C708/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (245 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 75.70.Cn
    Magnetic properties of interfaces
  • 85.70.Kh
    Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc
  • 85.75.-d
    Magnetoelectronics; spintronics
  • 73.40.Ns
    Electrical properties of metal-nonmetal contacts
  • 75.47.Pq
    Magnetotransport phenomena in other materials
  • 72.20.Ee
    Mobility edges; hopping transport (semiconductors/insulators)
  • YEAR: 2009

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (24)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. Z. H. Xiong et al., Nature (London) 427, 821 (2004).
  2. F. J. Wang et al., Phys. Rev. B 75, 245324 (2007).
  3. S. Majumdar et al., Appl. Phys. Lett. 89, 122114 (2006).
  4. F. Wang et al., Synth. Met. 155, 172 (2005).
  5. T. S. Santos et al., Phys. Rev. Lett. 98, 016601 (2007).
  6. J. H. Shim et al., Phys. Rev. Lett. 100, 226603 (2008).
  7. H. Park et al., Appl. Phys. Lett. 90, 202103 (2007) (and references therein).
  8. J. G. Laquindanum et al., J. Am. Chem. Soc. 118, 11331 (1996).
  9. H. E. Katz et al., ChemPhysChem 2, 167 (2001).
  10. Z. Bao et al., Appl. Phys. Lett. 69, 3066 (1996).
  11. R. Schad et al., Phys. Rev. B 57, 13692 (1998).
  12. M. Scheuermann et al., Phys. Rev. Lett. 50, 74 (1983).
  13. I. H. Campbell and B. K. Crone, Appl. Phys. Lett. 90, 242107 (2007).
  14. J. C. Walker et al., J. Appl. Phys. 55, 2500 (1984).
  15. M. Taborelli et al., J. Phys. Colloq. 49, C8-1659 (1988).
  16. W. Xu et al., Appl. Phys. Lett. 90, 072506 (2007).
  17. P. P. Ruden and D. L. Smith, J. Appl. Phys. 95, 4898 (2004).
  18. V. Dediu et al., Phys. Rev. B 78, 115203 (2008).
  19. I. G. Hill et al., Appl. Phys. Lett. 73, 662 (1998).
  20. A. Kahn et al., J. Polym. Sci., Part B: Polym. Phys. 41, 2529 (2003).
  21. M. V. Tiba et al., J. Appl. Phys. 100, 093707 (2006).
  22. M. Popinciuc et al., J. Appl. Phys. 100, 093714 (2006).
  23. Y. Q. Zhan et al., Phys. Rev. B 76, 045406 (2007).
  24. Y. Q. Zhan et al., Phys. Rev. B 78, 045208 (2008).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics