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Nanoelectromechanical system-integrated detector with silicon nanomechanical resonator and silicon nanochannel field effect transistor

J. Appl. Phys. 105, 094308 (2009); doi:10.1063/1.3122040

Published 4 May 2009

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Josef-Stefan Wenzler, Tyler Dunn, Shyamsunder Erramilli, and Pritiraj Mohanty
Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
We demonstrate the fabrication and operation of an integrated device containing a nanoelectromechanical system and an integrated detector. This on-chip silicon nanochannel field effect transistor is used to measure the motion of a silicon nanomechanical resonator at room temperature. Furthermore, we describe the operation of the device as a silicon-based room-temperature on-chip amplifier for improved displacement detection of nanomechanical resonators. ©2009 American Institute of Physics
History: Received 12 February 2009; accepted 23 March 2009; published 4 May 2009
Permalink: http://link.aip.org/link/?JAPIAU/105/094308/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.85.+j
    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
  • 85.30.Tv
    Semiconductor field effect devices
  • 07.10.Cm
    Micromechanical devices and systems
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
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REFERENCES (20)
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