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Curvature effect on the phonon thermal conductivity of dielectric nanowires

J. Appl. Phys. 105, 104313 (2009); doi:10.1063/1.3130671

Published 26 May 2009

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Liang-Chun Liu,1 Mei-Jiau Huang,1 Ronggui Yang,2 Ming-Shan Jeng,3 and Chang-Chung Yang3
1Department of Mechanical Engineering, National Taiwan University, Taipei 106, Taiwan
2Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, USA
3Energy and Environment Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
Phonon thermal conductivity of nanowires is very different from bulk materials and is of great importance to the applications of nanowires in nanoelectronics, sensors, and energy conversion and storage. Past theoretical studies usually assume that nanowires are perfectly straight and so as the analysis of experimental data. However, nanowires are not always straight with regards to both characterization and application. The curvature of nanowires could significantly change the thermal conductivity and thus bring uncertainty in characterization and product reliability due to its effect on ballistic phonon transport. In this study, the curvature effect on phonon thermal conductivity of dielectric nanowires is investigated using a phonon transport Monte Carlo simulator. It is found that the curvature impedes ballistic phonon transport in nanowires, causes an increase in the effective transport length of the thermal resistor, and thus reduces the effective thermal conductivity of nanowires. Such geometrical effect could be utilized as a new mechanism to tune the thermal conductivity of nanostructures. ©2009 American Institute of Physics
History: Received 25 February 2009; accepted 10 April 2009; published 26 May 2009
Permalink: http://link.aip.org/link/?JAPIAU/105/104313/1
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KEYWORDS and PACS

Keywords
PACS
  • 66.70.Lm
    Nonelectronic thermal conduction and heat-pulse propagation in other solids
  • 77.84.-s
    Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
  • 73.23.Ad
    Ballistic transport (mesoscopic systems)
  • 63.22.Gh
    Phonons and vibrational states in nanotubes and nanowires
  • YEAR: 2009

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ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (25)
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  1. D. G. Cahill, W. K. Ford, K. E. Goodson, G. D. Mahan, A. Majumdar, H. J. Maris, R. Merlin, and S. R. Phillpot, J. Appl. Phys. 93, 793 (2003).
  2. D. Li, Y. Wu, P. Kim, L. Shi, P. Yang, and A. Majumdar, Appl. Phys. Lett. 83, 2934 (2003).
  3. A. I. Hochbaum, R. Chen, R. D. Deigado, W. Liang, E. C. Garnett, M. Najarian, A. Majumdar, and P. Yang, Nature (London) 451, 163 (2008).
  4. M. -J. Huang, W. -Y. Chong, and T. -M. Chang, J. Appl. Phys. 99, 114318 (2006).
  5. M. -J. Huang, T. -M. Chang, W. -Y. Chong, C. -K. Liu, and C. -K. Yu, Int. J. Heat Mass Transfer 50, 67 (2007).
  6. S. G. Volz and G. Chen, Appl. Phys. Lett. 75, 2056 (1999).
  7. S. G. Volz, D. Lemonnier, and J. B. Saulnier, Microscale Thermophys. Eng. 5, 191 (2001).
  8. Y. Chen, D. Li, J. Lukes, and A. Majumdar, ASME J. Heat Transfer 127, 1129 (2005).
  9. D. Lacroix, K. Joulain, D. Terris, and D. Lemonnier, Appl. Phys. Lett. 89, 103104 (2006).
  10. P. Chantrenne, J. L. Barrar, X. Blasé, and J. D. Gale, J. Appl. Phys. 97, 104318 (2005).
  11. J. Xu and T. S. Fisher, Int. J. Heat Mass Transfer 49, 1658 (2006).
  12. R. G. Yang, G. Chen, M. Laroche, and Y. Taur, ASME J. Heat Transfer 127, 298 (2005).
  13. J. Y. Murthy and S. R. Mathur, ASME J. Heat Transfer 124, 1176 (2002).
  14. R. B. Peterson, ASME J. Heat Transfer 116, 815 (1994).
  15. S. Mazumder and A. Majumdar, ASME J. Heat Transfer 123, 749 (2001).
  16. D. Lacroix, K. Joulain, and D. Lemonnier, Phys. Rev. B 72, 064305 (2005).
  17. M. -S. Jeng, R. G. Yang, D. Song, and G. Chen, ASME J. Heat Transfer 130, 042410 (2008).
  18. R. G. Yang and G. Chen, Phys. Rev. B 69, 195316 (2004).
  19. R. G. Yang, G. Chen, and M. S. Dresselhaus, Phys. Rev. B 72, 125418 (2005).
  20. W. Tian and R. G. Yang, J. Appl. Phys. 101, 054320 (2007).
  21. W. Tian and R. G. Yang, Appl. Phys. Lett. 90, 263105 (2007).
  22. W. Tian and R. G. Yang, Comp. Model. Eng. Sci. 24, 123 (2008).
  23. A. L. Moore, S. K. Saha, R. S. Prasher, and L. Shi, Appl. Phys. Lett. 93, 083112 (2008).
  24. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/mechanic.html.
  25. C. J. Glassbrenner and G. A. Slack, Phys. Rev. 134, A1058 (1964).

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