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Structural, magnetic, and transport properties of laser-annealed GaAs:Mn–H

J. Appl. Phys. 106, 013904 (2009); doi:10.1063/1.3153943

Published 2 July 2009

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R. Farshchi,1,2 D. J. Hwang,3 N. Misra,3 C. C. Julaton, III,2 K. M. Yu,2 C. P. Grigoropoulos,3,4 and O. D. Dubon1,2
1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
3Department of Mechanical Engineering, Laser Thermal Laboratory, University of California, Berkeley, California 94720, USA
4Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
We have investigated the effect of laser annealing on the structural, magnetic, and transport properties of hydrogenated Ga0.96Mn0.04As films. Irradiation with nanosecond laser pulses leads to significant recovery of hole-mediated ferromagnetism in these films. By tuning processing parameters such as laser fluence and number of pulses, one can control the electrical and magnetic properties—namely, resistivity, magnetic coercivity, and remnant magnetization—in the laser-activated region. Ion-beam analysis indicates that the structural integrity of the film is maintained upon hydrogenation and laser annealing with evidence for displacement of substitutional Mn ions toward interstitial sites due to hydrogen-complex formation. Laser annealing results in the relaxation of up to 50% of Mn atoms back to substitutional sites while the Curie temperature recovers to ~60% of the TC prior to hydrogenation. Subsequent thermal annealing results in full relocation of Mn atoms to substitutional sites, yet the TC remains pinned at ~60% of its original value, suggesting the formation of a defect complex involving substitutional Mn. Our numerical simulations elucidate the strong interplay between laser processing parameters and Mn–H dissociation. ©2009 American Institute of Physics
History: Received 9 April 2009; accepted 18 May 2009; published 2 July 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/013904/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.70.Ak
    Magnetic properties of monolayers and thin films
  • 68.55.Ln
    Thin film defects and impurities
  • 73.61.Ey
    Electrical properties of III-V semiconductors (thin films)
  • 61.80.Ba
    Ultraviolet, visible, and infrared radiation effects
  • 75.60.Ej
    Magnetization curves, hysteresis, Barkhausen and related effects
  • 75.30.Kz
    Magnetic phase boundaries
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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