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Dispersive capacitance and conductance across the phase transition boundary in metal-vanadium oxide-silicon devices

J. Appl. Phys. 106, 034101 (2009); doi:10.1063/1.3186024

Published 3 August 2009

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Changhyun Ko and Shriram Ramanathan
Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
Utilizing metal-vanadium oxide (VO2)-semiconductor capacitor device structures, we have investigated the temperature- and frequency-dependent dielectric and ac conductance responses of vanadium oxide thin films that undergo metal-insulator transition (MIT). In both metallic and insulating regimes, VO2-based devices showed large tunabilities as high as ~95% and ~42%–54%, respectively. The frequency dependence of capacitance and ac conductance displays power-law behavior with respect to temperature and applied voltage over a broad range. Low-frequency dispersion in dielectric properties was also observed and their onset frequency varies across the MIT from ~0.5  MHz in insulating state to ~50  kHz in metallic state. The results are of potential relevance to utilizing functional oxides in electronic devices. ©2009 American Institute of Physics
History: Received 18 January 2009; accepted 27 June 2009; published 3 August 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/034101/1
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KEYWORDS and PACS

Keywords
PACS
  • 84.32.Tt
    Capacitors
  • 73.40.Qv
    Electrical properties of metal-insulator-semiconductor structures
  • 71.30.+h
    Metal-insulator transitions and other electronic transitions
  • YEAR: 2009

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0021-8979 (print)   1089-7550 (online)
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