Journal of Applied Physics
   
 
 
 
Previous Article
Response of seven crystallographic orientations of sapphire crystals to shock stresses of 16–86 GPa
Shock wave profiles of sapphire (single-crystal Al2O3) with seven crystallographic orientations (c, d, r, n, s, g, and m-cut) were measured with time-resolved VISAR (velocity interferometer for a surf...
Next Article
The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTiO3
In this paper, electron paramagnetic resonance, photoluminescence (PL) emission, and quantum mechanical calculations were used to observe and understand the structural order-disorder of CaTiO3, paying...

Strain relaxation in epitaxial Pt films on (001) SrTiO3

J. Appl. Phys. 106, 043525 (2009); doi:10.1063/1.3207795

Published 31 August 2009

You are not logged in to this journal. Log in

Junwoo Son, Joël Cagnon, and Susanne Stemmer
Materials Department, University of California, Santa Barbara, California 93106-5050, USA
The relationship between strain relaxation and microstructure evolution of epitaxial, (001)-oriented Pt thin films on (001) SrTiO3 substrates is investigated as a function of Pt film thickness. X-ray diffraction shows that the Pt films gradually relax after film coalescence with increasing film thickness. The Pt film surfaces exhibit a cross-hatched surface pattern that increases in amplitude and density with film thickness and is due to progressive relaxation of the lattice mismatch strain by twinning. The potential of these Pt films as bottom electrodes for functional perovskite films is discussed. ©2009 American Institute of Physics
History: Received 15 July 2009; accepted 22 July 2009; published 31 August 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/043525/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (415 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 68.60.Bs
    Mechanical and acoustical properties of thin films
  • 62.40.+i
    Anelasticity, internal friction, stress relaxation, and mechanical resonances
  • 81.40.Jj
    Elasticity and anelasticity, stress-strain relations
  • 68.55.jd
    Thin film thickness
  • 68.35.bd
    Surface structure of metals and alloys
  • 68.35.Gy
    Mechanical properties and surface strains of solid surfaces and interfaces
  • YEAR: 2009

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (23)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. S. Ramanathan, B. M. Clemens, P. C. McIntyre, and U. Dahmen, Philos. Mag. A 81, 2073 (2001).
  2. R. F. C. Farrow, G. R. Harp, R. F. Marks, T. A. Rabedeau, M. F. Toney, D. Weller, and S. S. P. Parkin, J. Cryst. Growth 133, 47 (1993).
  3. S. Schmidt, J. W. Lu, S. P. Keane, L. D. Bregante, D. O. Klenov, and S. Stemmer, J. Am. Ceram. Soc. 88, 789 (2005).
  4. B. M. Lairson, M. R. Visokay, R. Sinclair, S. Hagstrom, and B. M. Clemens, Appl. Phys. Lett. 61, 1390 (1992).
  5. J. Son, J. Cagnon, D. S. Boesch, and S. Stemmer, Appl. Phys. Express 1, 061603 (2008).
  6. P. C. McIntyre, C. J. Maggiore, and M. Nastasi, J. Appl. Phys. 77, 6201 (1995).
  7. J. Son, J. Cagnon, and S. Stemmer, Appl. Phys. Lett. 94, 062903 (2009).
  8. H. Fujisawa, M. Kume, M. Shimizu, Y. Kotaka, and K. Honda, 16th IEEE International Symposium on Applications of Ferroelectrics (ISAF), 2007 (unpublished), p. 183.
  9. X. M. Xu, J. Liu, Z. Yuan, J. Weaver, C. L. Chen, Y. R. Li, H. J. Gao, and N. Shi, Appl. Phys. Lett. 92, 102102 (2008).
  10. A. J. Francis and P. A. Salvador, J. Mater. Res. 22, 89 (2007).
  11. M. McLean and H. Mykura, Surf. Sci. 5, 466 (1966).
  12. A. Krost, G. Bauer, and J. Woitok, in Optical Characterization of Epitaxial Semiconductor Layers, edited by G. Bauer and W. Richter (Springer, Berlin, 1996).
  13. R. E. Macfarlane, J. A. Rayne, and C. K. Jones, Phys. Lett. 18, 91 (1965).
  14. K. H. Chang, R. Gibala, D. J. Srolovitz, P. K. Bhattacharya, and J. F. Mansfield, J. Appl. Phys. 67, 4093 (1990).
  15. A. M. Andrews, A. E. Romanov, J. S. Speck, M. Bobeth, and W. Pompe, Appl. Phys. Lett. 77, 3740 (2000).
  16. D. Halley, Y. Samson, A. Marty, P. Bayle-Guillemaud, C. Beigne, B. Gilles, and J. E. Mazille, Phys. Rev. B 65, 205408 (2002).
  17. W. Wegscheider and H. Cerva, J. Vac. Sci. Technol. 11, 1056 (1993).
  18. Y. Li, G. C. Weatherlyy, and M. Niewczas, Philos. Mag. 85, 3073 (2005).
  19. M. Dynna and A. Marty, Acta Mater. 46, 1087 (1998).
  20. L. L. Liu, Y. S. Zhang, and T. Y. Zhang, J. Appl. Phys. 101, 12 (2007).
  21. X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, J. Cryst. Growth 189–190, 231 (1998).
  22. F. K. LeGoues, M. C. Reuter, J. Tersoff, M. Hammar, and R. M. Tromp, Phys. Rev. Lett. 73, 300 (1994).
  23. S. Stemmer, S. K. Streiffer, F. Ernst, and M. Ruhle, Phys. Status Solidi A 147, 135 (1995).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.