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Negative capacitance in GaN/AlGaN heterojunction dual-band detectors

J. Appl. Phys. 106, 053701 (2009); doi:10.1063/1.3211292

Published 2 September 2009

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L. E. Byrum,1 G. Ariyawansa,1 R. C. Jayasinghe,1 N. Dietz,1 A. G. U. Perera,1 S. G. Matsik,2 I. T. Ferguson,3 A. Bezinger,4 and H. C. Liu4
1Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
2NDP Optronics LLC, Mableton, Georgia 30126, USA
3School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30032, USA
4Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada
A study of trap states in n+-GaN/AlGaN heterostructures using electrical, thermal, and optical analyses is reported. Capacitance-voltage-frequency measurements showed negative capacitance and dispersion, indicating interface trap states. Infrared spectra identified three impurity related absorption centers attributed to shallow Si-donor (pinned to the AlGaN barrier), N-vacancy/C-donor, and deep Si-donor (pinned to the GaN emitter) impurities with corresponding activation energies of 30.8±0.2, 125±1, and 140±2  meV, respectively. The shallow Si-donor impurity had a relaxation time of 155±9  µs, while the C-donor/N-vacancy and deep Si-donor impurities appear to behave as a single trap state with a relaxation time of 1.77±0.05  µs. Multiple analysis techniques allowed the determination of the activation energies of these impurity related centers and the study of the effects of trap states on the electrical behavior of the detector. ©2009 American Institute of Physics
History: Received 22 May 2009; accepted 22 July 2009; published 2 September 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/053701/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Kp
    Electrical properties of III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
  • 71.55.Eq
    Impurity and defect levels in III-V semiconductors
  • 78.30.Fs
    Infrared and Raman spectra in III-V and II-VI semiconductors
  • 07.07.Df
    Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
  • 61.72.jd
    Vacancies (point defects)
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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