Device modeling for split-off band detectors
J. Appl. Phys. 106, 064503 (2009); doi:10.1063/1.3224873
Published 18 September 2009
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An approach to develop room temperature detectors is to use transitions between the light/heavy hole bands and the split-off hole band to produce enhanced response at high temperature. Results are presented on a theoretical model to predict the response in these split-off detectors. The model calculates the dark and illuminated currents from the photoabsorption, carrier escape, and transport, explaining the experimental response. The variation in dark current, responsivity, and D* with the detector parameters is presented.
©2009 American Institute of Physics
| History: | Received 30 April 2009; accepted 12 August 2009; published 18 September 2009 |
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http://link.aip.org/link/?JAPIAU/106/064503/1 |
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