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Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

J. Appl. Phys. 106, 083104 (2009); doi:10.1063/1.3246781

Published 22 October 2009

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T. Piwonski,1 J. Pulka,1 G. Madden,1 G. Huyet,1 J. Houlihan,2 J. Pozo,3 N. Vogiatzis,3 P. Ivanov,3 J. M. Rorison,3 P. J. Barrios,4 and J. A. Gupta4
1Tyndall National Institute, Lee Maltings, Cork, Ireland and Department of Applied Physics, Cork Institute of Technology, Ireland
2Department of Computing, Maths and Physics, Waterford Institute of Technology, Waterford, Ireland
3Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1UB Avon, England
4Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
The gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers are studied using heterodyne pump probe spectroscopy, both in forward and reverse bias regimes. In the forward biased absorption regime, both gain and refractive index relax on the same timescale indicating that both quantities are linked to the same relaxation process, interband recombination. Above transparency, in the forward biased gain regime, the gain and phase exhibit differing timescales resulting in a dynamical alpha factor that varies strongly with time. Reversed bias measurements suggest a recombination dominated absorption recovery where the recovery timescale increases with increasing reversed bias, possibly due to charge separation effects. ©2009 American Institute of Physics
History: Received 25 June 2009; accepted 20 September 2009; published 22 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083104/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Semiconductor lasers; laser diodes
  • 42.65.Re
    Ultrafast processes; optical pulse generation and pulse compression
  • 42.25.-p
    Wave optics
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (18)
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