Influence of thin metal nanolayers on the photodetective properties of ZnO thin films
J. Appl. Phys. 106, 083110 (2009); doi:10.1063/1.3251370
Published 28 October 2009
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We investigate the photoconductivity properties of ZnO thin films prepared by pulsed laser deposition with and without metals (Au or Pt) on the surface. The covering of nanostructured metals can largely enhance the photocurrent. Meanwhile, the dark currents have been increased significantly due to the increase in carrier concentration and mobility near the surface of ZnO thin film. Although plasmonic effect was observed by the photoluminescence enhancement, the main mechanism of the increase in the dark current and photoresponsivity for ZnO photoconductors has been interpreted by surface states, interface states, and persistent photoconductivity.
©2009 American Institute of Physics
| History: | Received 30 August 2009; accepted 22 September 2009; published 28 October 2009 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/106/083110/1 |
KEYWORDS and PACS
carrier density,
carrier mobility,
gold,
II-VI semiconductors,
interface states,
nanostructured materials,
photoconductivity,
photoluminescence,
platinum,
pulsed laser deposition,
semiconductor thin films,
semiconductor-metal boundaries,
surface states,
wide band gap semiconductors,
zinc compounds
- 73.61.Ga
Electrical properties of II-VI semiconductors (thin films) - 81.15.Fg
Laser deposition - 73.50.Pz
Photoconduction and photovoltaic effects in thin films - 72.20.Fr
Low-field transport and mobility; piezoresistance (semiconductors/insulators) - 73.50.Dn
Low-field transport and mobility; piezoresistance (thin films) - 73.40.Ns
Electrical properties of metal-nonmetal contacts - 73.20.At
Surface states, band structure, electron density of states - YEAR: 2009
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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