Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Reconstruction of polarized optical images in two- and three-dimensional vector holograms
In the present paper, we extensively study the optical diffraction in two- and three-dimensional vector holograms and demonstrate the reconstruction of polarized optical images recorded in azobenzene-...
Next Article
Dynamic characterizations of high diffraction efficiency in volume Bragg grating formed by holographic photopolymerization
Volume Bragg grating with 96% diffraction efficiency (DE) was efficiently formed by holographic photopolymerization in blend syrup of photocurable trimethylolpropane triacrylate monomer and nematic li...

Influence of thin metal nanolayers on the photodetective properties of ZnO thin films

J. Appl. Phys. 106, 083110 (2009); doi:10.1063/1.3251370

Published 28 October 2009

You are not logged in to this journal. Log in

K. W. Liu,1 B. Liu,1 S. J. Wang,2 Z. P. Wei,1 T. Wu,1 C. X. Cong,1 Z. X. Shen,1 X. W. Sun,3 and H. D. Sun1
1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
2Institute of Materials Research and Engineering, Singapore 117602, Singapore
3School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore

We investigate the photoconductivity properties of ZnO thin films prepared by pulsed laser deposition with and without metals (Au or Pt) on the surface. The covering of nanostructured metals can largely enhance the photocurrent. Meanwhile, the dark currents have been increased significantly due to the increase in carrier concentration and mobility near the surface of ZnO thin film. Although plasmonic effect was observed by the photoluminescence enhancement, the main mechanism of the increase in the dark current and photoresponsivity for ZnO photoconductors has been interpreted by surface states, interface states, and persistent photoconductivity. ©2009 American Institute of Physics
History: Received 30 August 2009; accepted 22 September 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083110/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (440 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 73.61.Ga
    Electrical properties of II-VI semiconductors (thin films)
  • 81.15.Fg
    Laser deposition
  • 73.50.Pz
    Photoconduction and photovoltaic effects in thin films
  • 72.20.Fr
    Low-field transport and mobility; piezoresistance (semiconductors/insulators)
  • 73.50.Dn
    Low-field transport and mobility; piezoresistance (thin films)
  • 73.40.Ns
    Electrical properties of metal-nonmetal contacts
  • 73.20.At
    Surface states, band structure, electron density of states
  • YEAR: 2009

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (21)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. D. M. Schaadt, B. Feng, and E. T. Yu, Appl. Phys. Lett. 86, 063106 (2005).
  2. S. H. Lim, W. Mar, P. Matheu, D. Derkacs, and E. T. Yu, J. Appl. Phys. 101, 104309 (2007).
  3. S. P. Sundararajan, N. K. Grady, N. Mirin, and N. J. Halas, Nano Lett. 8, 624 (2008).
  4. J. A. Shackleford, R. Grote, M. Currie, J. E. Spanier, and B. Nabet, Appl. Phys. Lett. 94, 083501 (2009).
  5. D. Derkacs, W. V. Chen, P. M. Matheu, S. H. Lim, P. K. L. Yu, and E. T. Yu, Appl. Phys. Lett. 93, 091107 (2008).
  6. R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, Appl. Phys. Lett. 91, 191111 (2007).
  7. H. K. Yadav, K. Sreenivas, and V. Gupta, Appl. Phys. Lett. 90, 172113 (2007).
  8. K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, B. Yao, D. X. Zhao, Y. M. Lu, and X. W. Fan, Appl. Phys. Lett. 91, 201106 (2007).
  9. K. W. Liu, J. G. Ma, J. Y. Zhang, Y. M. Lu, D. Y. Jiang, B. H. Li, D. X. Zhao, Z. Z. Zhang, B. Yao, and D. Z. Shen, Solid-State Electron. 51, 757 (2007).
  10. K. W. Liu, D. Z. Shen, C. X. Shan, J. Y. Zhang, D. Y. Jiang, Y. M. Zhao, B. Yao, and D. X. Zhao, J. Phys. D: Appl. Phys. 41, 125104 (2008).
  11. C. W. Lai, J. An, and H. C. Ong, Appl. Phys. Lett. 86, 251105 (2005).
  12. K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, M. Takashi, and Y. Kawakami, Appl. Phys. Lett. 87, 071102 (2005).
  13. K. W. Liu, Y. D. Tang, C. X. Cong, T. C. Sum, A. C. H. Huan, Z. X. Shen, L. Wang, F. Y. Jiang, X. W. Sun, and H. D. Sun, Appl. Phys. Lett. 94, 151102 (2009).
  14. Y. P. Hsieh, C. T. Liang, Y. F. Chen, C. W. Lai, and P. T. Chou, Nanotechnology 18, 415707 (2007).
  15. E. M. Kaidashev, M. Lorenz, H. von Wenckstern, A. Rahm, H. -C. Semmelhack, K. -H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann, Appl. Phys. Lett. 82, 3901 (2003).
  16. Q. H. Li, Q. Wan, Y. X. Liang, and T. H. Wang, Appl. Phys. Lett. 84, 4556 (2004).
  17. Z. Fan, D. Wang, P. C. Chang, W. Y. Tseng, and J. G. Lu, Appl. Phys. Lett. 85, 5923 (2004).
  18. J. D. Prades, F. Hernandez-Ramirez, R. Jimenez-Diaz, M. Manzanares, T. Andreu, A. Cirera, A. Romano-Rodriguez, and J. R. Morante, Nanotechnology 19, 465501 (2008).
  19. P. Muret and A. Deneuville, Surf. Sci. 168, 830 (1986).
  20. H. L. Mosbacker, S. El Hage, M. Gonzalez, S. A. Ringel, M. Hetzer, D. C. Look, G. Cantwell, J. Zhang, J. J. Song, and L. J. Brillson, J. Vac. Sci. Technol. B 25, 1405 (2007).
  21. M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.