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Optical nonlinear absorption characteristics of AgInSbTe phase change thin films

J. Appl. Phys. 106, 083112 (2009); doi:10.1063/1.3247194

Published 28 October 2009

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Jing Liu and Jingsong Wei
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, Shanghai 201800, China
The AgInSbTe phase change thin films are very important as optical recording and the super-resolution mask materials in high density optical information storage. In this work, the effective nonlinear absorption coefficients of amorphous and crystalline AgInSbTe thin films were measured by the open-mode Z-scan method and no evidence of nonlinear refraction was found in the closed-mode Z-scan measurement. The effective nonlinear absorption coefficient betaeff of amorphous AgInSbTe thin films is 7.53×10−3  m/W and the effective photon-absorption number n is 1.722; betaeff of crystalline AgInSbTe thin films is 3.5×10−2  m/W, which is of an order lager than that of amorphous state, and the n value is 1.7011. The giant nonlinearity of AgInSbTe results from the free carrier absorption in the nanosecond time scale and this characteristic should be responsible for the mechanism of optical recording as well as the readout of super-resolution disk. ©2009 American Institute of Physics
History: Received 3 August 2009; accepted 14 September 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083112/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.20.Ci
    Optical constants
  • 42.70.Nq
    Other nonlinear optical materials; photorefractive and semiconductor materials
  • 42.79.Vb
    Optical storage systems, optical disks
  • 42.65.-k
    Nonlinear optics
  • 73.61.Jc
    Electrical properties of amorphous semiconductors; glasses (thin films)
  • 73.61.Le
    Electrical properties of other inorganic semiconductors (thin films)
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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