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Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

J. Appl. Phys. 106, 083514 (2009); doi:10.1063/1.3248372

Published 23 October 2009

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H. Y. Xu,1 Y. N. Guo,1 Y. Wang,1 J. Zou,1,2 J. H. Kang,3 Q. Gao,3 H. H. Tan,3 and C. Jagadish3
1Materials Engineering, The University of Queensland, St Lucia, Queensland 4072, Australia
2Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, Queensland 4072, Australia
3Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 0200, Australia
GaAs thin films grown on Si (100) and (111) substrates by metal-organic chemical vapor deposition were investigated by electron microscopy. It was found that the growth rate of the GaAs epitaxial layers on Si (100) was faster than that on Si (111) due to a lower Si (111) surface energy. The morphologies and internal crystal structure quality of GaAs films grown on Si (111) were better than those grown on Si (100). It was also found that postannealing at high temperature can improve the morphology of the epitaxial layer surface and reduce lattice defects in the thin films. ©2009 American Institute of Physics
History: Received 6 September 2009; accepted 22 September 2009; published 23 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083514/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.72.Cc
    Kinetics of defect formation and annealing
  • 81.15.Gh
    Chemical vapor deposition
  • 81.15.Kk
    Vapor phase epitaxy; growth from vapor phase
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 65.40.gp
    Surface energy of crystalline solids
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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