Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
GaAs thin films grown on Si (100) and (111) substrates by metal-organic chemical vapor deposition were investigated by electron microscopy. It was found that the growth rate of the GaAs epitaxial laye...
Next Article
Mechanism of the swift heavy ion induced epitaxial recrystallization in predamaged silicon carbide
Although silicon carbide has attracted extensive investigations of ion irradiation effects at low energy owing to its potential use in harsh environments, very few works were carried out in the field ...

Trapping of Ce electrons in band gap and room temperature ferromagnetism of Ce4+ doped ZnO nanowires

J. Appl. Phys. 106, 083515 (2009); doi:10.1063/1.3245325

Published 26 October 2009

You are not logged in to this journal. Log in

Javed Iqbal,1 Xiaofang Liu,1 Huichao Zhu,2 Chongchao Pan,1 Yong Zhang,3 Dapeng Yu,2 and Ronghai Yu1
1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
2State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
3Center for Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139-4307, USA
Rare-earth (RE) metal doped ZnO nanowires have been fabricated through a simple, quick, and versatile low temperature soft chemical method. The average length and diameter of nanowires lie in range of 5  µm and 60  nm, respectively. Raman and x-ray photoelectron spectroscopy studies demonstrate that Ce has 4+ oxidation state and successfully substitutes Zn up to 2.5% into ZnO single phase wurtzite structure. Doping of Ce shows a remarkably prominent large redshift of 22  nm in the UV region of the band gap, with an increase in the intensity of green emission band due to charge transfer of Ce4+ dopant. In addition, it has been interestingly found that RE (Ce) doped ZnO nanowires exhibit room temperature ferromagnetism, which makes them potential for spintronic devices with excellent optical characteristics. ©2009 American Institute of Physics
History: Received 4 April 2009; accepted 13 September 2009; published 26 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083515/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (819 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 73.21.Hb
    Quantum wires (electron states/collective excitations)
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • 79.60.Jv
    Photoelectron spectra of interfaces; heterostructures; nanostructures
  • 75.50.Pp
    Magnetic semiconductors
  • YEAR: 2009

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (35)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
  2. H. Ohno, Science 281, 951 (1998).
  3. D. Gao, Y. Xu, Z. Zhang, H. Gao, and D. Xue, J. Appl. Phys. 105, 63903 (2009).
  4. O. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, J. Appl. Phys. 98, 041301 (2005).
  5. K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 1 40, 334 (2001).
  6. Y. W. Heo, M. P. Ivill, K. Ip, D. P. Norton, and J. Pearton, Appl. Phys. Lett. 84, 2292 (2004).
  7. D. P. Norton, S. J. Pearton, A. F. Hebard, N. Theodoropoulou, L. A. Boatner, and R. G. Wilson, Appl. Phys. Lett. 82, 239 (2003).
  8. M. Cho, W. K. Choo, H. Kim, D. Kim, and Y. E. Ihm, Appl. Phys. Lett. 80, 3358 (2002).
  9. K. Ueda, H. Tabata, and T. Kawai, Appl. Phys. Lett. 79, 988 (2001).
  10. H. J. Lee, S. Y. Jeong, C. R. Cho, and C. H. Park, Appl. Phys. Lett. 81, 4020 (2002).
  11. M. Hashimoto, K. Araki, K. Sato, Y. K. Zhou, H. Asahi, and H. Katayama-Yoshida, Extended Abstracts for the 63rd Autumn Meeting of JSAP, 2002 (unpublished), Paper No. 26p-ZA-5, p. 438.
  12. U. Hommerich, E. E. Nyein, J. Heikenfeld, A. J. Steckl, and J. M. Zavada, Mater. Sci. Eng., B 105, 91 (2003).
  13. S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim, and L. A. Boatner, J. Appl. Phys. 93, 1 (2003).
  14. K. Ando, Solid State Sci. 128, 211 (2000).
  15. S. Dhar, O. Brandt, M. Ramsteiner, V. F. Sapega, and K. H. Ploog, Phys. Rev. Lett. 94, 037205 (2005).
  16. N. Teraguchi, A. Suzuki, Y. Nanishi, Y. K. Zhou, M. Hashimoto, and H. Asahi, Solid State Commun. 122, 651 (2002).
  17. H. Asahi, Y. K. Zhou, M. Hashimoto, M. S. Kim, X. J. Li, S. Emura, and S. Hasegawa, J. Phys.: Condens. Matter 16, S5555 (2004).
  18. B. C. Cheng, Y. H. Xiao, G. S. Wu, and L. D. Zhang, Appl. Phys. Lett. 84, 416 (2004).
  19. Y. Morinaga, K. Sakuragi, N. Fujimura, and T. Ito, J. Cryst. Growth 174, 691 (1997).
  20. J. H. Yang, M. Gao, L. Yang, Y. J. Zhang, J. H. Lang, D. D. Wang, Y. X. Wang, H. L. Liu, and H. G. Fan, Appl. Surf. Sci. 255, 2646 (2008).
  21. J. Iqbal, B. Wang, X. F. Liu, D. P. Yu, B. He, and R. H. Yu, New J. Phys. 11, 63009 (2009).
  22. JCPDA Card No. 79-2205.
  23. G. R. Li, X. H. Lu, W. X. Zhao, C. Y. Su, and Y. X. Tong, Cryst. Growth Des. 8, 1276 (2008).
  24. C. D. Wanger, W. M. Riggs, L. E. Davis, and J. F. Moulder, Handbook of XPS (PerkinElmer Corporation, Eden Prairie, MN, 1979), p. 134.
  25. C. A. Arguello, D. L. Rousseau, and S. P. S. Porto, Phys. Rev. 181, 1351 (1969).
  26. L. V. Azaroff, Introduction to Solids (McGraw-Hill, New York, 1960), pp. 371–372.
  27. V. A. Fonoberov and A. A. Balandin, J. Nanoelectron. Optoelectron. 1, 19 (2006).
  28. T. C. Damen, S. P. S. Porto, and B. Tell, Phys. Rev. 142, 570 (1966).
  29. Y. W. Chen, Y. C. Liu, S. X. Lu, C. S. Xu, C. L. Shao, C. Wang, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, J. Chem. Phys. 123, 134701 (2005).
  30. S. Y. Bae, H. C. Choi, C. W. Na, and J. H. Park, Appl. Phys. Lett. 86, 33102 (2005).
  31. H. C. Gong, J. F. Zhong, S. M. Zhou, B. Zhang, Z. H. Li, and Z. L. Du, Superlattices Microstruct. 44, 183 (2008).
  32. W. Li, Y. Wang, H. Lin, S. Ismat Shah, C. P. Huang, D. J. Doren, S. A. Rykov, J. G. Chen, and M. A. Barteau, Appl. Phys. Lett. 83, 4143 (2003).
  33. A. Majid and A. Ali, J. Phys. D: Appl. Phys. 42, 45412 (2009).
  34. H. S. Li, Y. P. Li, and J. M. D. Coey, J. Phys.: Condens. Matter 3, 7277 (1991).
  35. T. Story, M. Gorska, A. Lusakowski, M. Arciszewska, W. Dobrowolski, E. Grodzicka, Z. Golacki, and R. R. Galazka, Phys. Rev. Lett. 77, 3447 (1996).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics